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參數資料
| 型號： | AM29LV2562ML120RPII |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| 中文描述： | 16M X 32 FLASH 3V PROM, 120 ns, PBGA80 |
| 封裝： | 18 X 12 MM, FBGA-80 |
| 文件頁數： | 3/69頁 |
| 文件大?。?/td> | 1451K |
| 代理商： | AM29LV2562ML120RPII |
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PRELIMINARY
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
26494
Issue Date:
October 9, 2003
Rev:
B
Amendment/
+1
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV2562M
512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit
3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O
Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■
Single power supply operation
— 3 volt read, erase, and program operations
■
VersatileI/O
TM
control
— Device generates data output voltages and tolerates
data input voltages on the CE# and DQ inputs/outputs
as determined by the voltage on the V
IO
pin; operates
from 1.65 to 3.6 V
■
Manufactured on 0.23 μm MirrorBit
TM
process
technology
■
SecSi
(Secured Silicon) Sector region
— 128-doubleword/256-word sector for permanent,
secure identification through an
8-doubleword/16-word random Electronic Serial
Number, accessible through a command sequence
— May be programmed and locked at the factory or by
the customer
■
Flexible sector architecture
— Five hundred twelve 32 Kdoubleword (64 Kword)
sectors
■
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
■
100,000 erase cycles per sector
■
20-year data retention at 125
°
C
PERFORMANCE CHARACTERISTICS
■
High performance
— 120 ns access time
— 30 ns page read times
— 0.5 s typical sector erase time
— 15 μs typical write buffer doubleword programming
time: 16-doubleword/32-word write buffer reduces
overall programming time for multiple-word updates
— 4-doubleword/8-word page read buffer
— 16-doubleword/32-word write buffer
■
Low power consumption (typical values at 3.0 V, 5
MHz)
— 26 mA typical active read current
— 100 mA typical erase/program current
— 2 μA typical standby mode current
■
Package options
— 80-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
■
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
■
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Group Unprotect: V
ID
-level method
of changing code in locked sector groups
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
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| Am29PDL128G90 | 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control |
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| AM29LV320DB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP |
| AM29LV320DB120WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA |
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