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參數(shù)資料
| 型號： | AM29LV2562M |
| 廠商： | Spansion Inc. |
| 英文描述： | 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| 中文描述： | 512兆位（16 M中的x 32-Bit/32 M中的x 16位）的MirrorBit 3.0伏特，只有統(tǒng)一閃存部門與VersatileI / O控制 |
| 文件頁數(shù)： | 64/69頁 |
| 文件大?。?/td> | 1451K |
| 代理商： | AM29LV2562M |
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62
Am29LV2562M
October 9, 2003
P R E L I M I N A R Y
AC CHARACTERISTICS
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# and DQ15# are the complement of the data written to the device. D
OUT
is the data written to the device.
4. Waveforms are for the word mode.
Figure 24.
Alternate CE# Controlled Write (Erase/Program)
Operation Timings
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| AM29LV2562MH120RPII | 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
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