參數(shù)資料
型號(hào): AM29LV2562M
廠商: Spansion Inc.
英文描述: 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
中文描述: 512兆位(16 M中的x 32-Bit/32 M中的x 16位)的MirrorBit 3.0伏特,只有統(tǒng)一閃存部門與VersatileI / O控制
文件頁(yè)數(shù): 11/69頁(yè)
文件大?。?/td> 1451K
代理商: AM29LV2562M
October 9, 2003
Am29LV2562M
9
P R E L I M I N A R Y
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is a latch used to store the com-
mands, along with the address and data information
needed to execute the command. The contents of the
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the in-
puts and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Table 1.
Device Bus Operations
Legend:
L = Logic Low = V
, H = Logic High = V
IH
, V
ID
= 11.5–12.5 V, V
HH
= 11.5–12.5V, X = Don’t Care, SA = Sector Address,
A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1. Addresses are A23:A0 in doubleword mode; A23:A-1 in word mode. Sector addresses are A23:A15 in both modes.
2. The sector group protect and sector group unprotect functions may also be implemented via programming equipment. See the
“Sector Group Protection and Unprotection” section.
3. If WP# = V
IL
, the first or last sector group remains protected. If WP# = V
IH
, the first or last sector will be protected or unprotected as
determined by the method described in “Write Protect (WP#)” All sectors are unprotected when shipped from the factory (The
SecSi Sector may be factory protected depending on version ordered.)
4. D
IN
or D
OUT
as required by command sequence, data polling, or sector protect algorithm (see Figure 2).
Word/Byte Configuration
The WORD# pin controls whether the device data I/O
pins operate in the word or doubleword configuration.
If the WORD# pin is set at V
IH
, the device is in double-
word configuration, DQ31–DQ0 are active and con-
trolled by CE# and OE#.
If the WORD# pin is set at V
IL
, the device is in word
configuration, and only data I/O pins DQ15–DQ0 are
active and controlled by CE# and OE#. The data I/O
pins DQ31–DQ16 are tri-stated, and the DQ23 and
DQ31 pins are used as inputs for the LSB (A-1) ad-
dress function.
VersatileIO
TM
(V
IO
) Control
The VersatileIO
TM
(V
IO
) control allows the host system
to set the voltage levels that the device generates and
tolerates on CE# and DQ I/Os to the same voltage
level that is asserted on V
IO
. See Ordering Information
for V
IO
options on this device.
Operation
CE#
OE#
WE#
RESET#
WP#
ACC
Addresses
(Note 2)
DQ15–
DQ0
DQ31–DQ16
WORD#
= V
IH
WORD#
= V
IL
Read
L
L
H
H
X
L/H
A
IN
D
OUT
D
OUT
DQ31–DQ16
= High-Z,
DQ31 &
DQ23= A-1
Write (Program/Erase)
L
H
L
H
(Note 3)
L/H
A
IN
(Note 4)
(Note 4)
Accelerated Program
L
H
L
H
(Note 3)
V
HH
A
IN
(Note 4)
(Note 4)
Standby
V
±
0.3 V
X
X
V
±
0.3 V
X
H
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
L/H
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
L/H
X
High-Z
High-Z
High-Z
Sector Group Protect
(Note 2)
L
H
L
V
ID
H
L/H
SA, A6 =L,
A3=L, A2=L,
A1=H, A0=L
(Note 4)
X
X
Sector Group Unprotect
(Note 2)
L
H
L
V
ID
H
L/H
SA, A6=H,
A3=L, A2=L,
A1=H, A0=L
(Note 4)
X
X
Temporary Sector Group
Unprotect
X
X
X
V
ID
H
L/H
A
IN
(Note 4)
(Note 4)
High-Z
相關(guān)PDF資料
PDF描述
AM29LV2562MH120RPII 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV2562ML120RPII 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29PDL128G High Speed CMOS Logic 9-Bit Odd/Even Parity Generator/Checker 14-CDIP -55 to 125
Am29PDL128G70 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
Am29PDL128G70R 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV256MH120RPGI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays
AM29LV256MH123RPGI 制造商:Advanced Micro Devices 功能描述:
AM29LV256MH94REI 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, TSOP56, IND - Trays
AM29LV320DB120EI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP
AM29LV320DB120WMI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA