參數(shù)資料
型號: AM29LV2562M
廠商: Spansion Inc.
英文描述: 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
中文描述: 512兆位(16 M中的x 32-Bit/32 M中的x 16位)的MirrorBit 3.0伏特,只有統(tǒng)一閃存部門與VersatileI / O控制
文件頁數(shù): 32/69頁
文件大?。?/td> 1451K
代理商: AM29LV2562M
30
Am29LV2562M
October 9, 2003
P R E L I M I N A R Y
Table 6.
CFI Query Identification String
Table 7.
System Interface String
Addresses (x32)
Data
Description
10h
11h
12h
00005151h
00005252h
00005959h
Query Unique ASCII string “QRY”
13h
14h
00000202h
00000000h
Primary OEM Command Set
15h
16h
00004040h
00000000h
Address for Primary Extended Table
17h
18h
00000000h
00000000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
00000000h
00000000h
Address for Alternate OEM Extended Table (00h = none exists)
Addresses (x16)
Data
Description
1Bh
00002727h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
00003636h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
00000000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
00000000h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
00000707h
Typical timeout per single byte/word write 2
N
μs
20h
00000707h
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
21h
00000A0Ah
Typical timeout per individual block erase 2
N
ms
22h
00000000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
00000101h
Max. timeout for byte/word write 2
N
times typical
24h
00000505h
Max. timeout for buffer write 2
N
times typical
25h
00000404h
Max. timeout per individual block erase 2
N
times typical
26h
00000000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
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