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參數(shù)資料
| 型號： | AM29LV2562M |
| 廠商： | Spansion Inc. |
| 英文描述： | 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| 中文描述： | 512兆位（16 M中的x 32-Bit/32 M中的x 16位）的MirrorBit 3.0伏特，只有統(tǒng)一閃存部門與VersatileI / O控制 |
| 文件頁數(shù)： | 56/69頁 |
| 文件大?。?/td> | 1451K |
| 代理商： | AM29LV2562M |
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54
Am29LV2562M
October 9, 2003
P R E L I M I N A R Y
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 doublewords/1–32 words programmed.
4. Effective write buffer specification is based upon a 16-doubleword/32-word write buffer operation.
5. AC specifications listed are tested with V
IO
= V
CC
. Contact AMD for information on AC operation when V
IO
≠
V
CC
Parameter
120R
JEDEC
Std.
Description
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
μs
Effective Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
7.5
μs
Per Doubleword
Typ
15
μs
Accelerated Effective Write Buffer Program
Operation (Notes 2, 4)
Per Word
Typ
6.25
μs
Per Doubleword
Typ
12.5
μs
Single Doubleword/Word Program
Operation (Note 2)
Word
Typ
60
μs
Doubleword
Typ
60
μs
Accelerated Single Doubleword/Word
Programming Operation (Note 2)
Word
Typ
54
μs
Doubleword
Typ
54
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
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|---|---|
| AM29LV2562MH120RPII | 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
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| Am29PDL128G70R | 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control |
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