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| 型號(hào)： | AM29BDS640GTC9WSI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 20 ns, PBGA80 |
| 封裝： | 11 X 12 MM, 0.80 MM PITCH, FBGA-80 |
| 文件頁(yè)數(shù)： | 5/65頁(yè) |
| 文件大小： | 899K |
| 代理商： | AM29BDS640GTC9WSI |
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Am29BDS640G
October 31, 2002
A D V A N C E I N F O R M A T I O N
Figure 23. Synchronous ProgramOperation Timngs..................... 51
Figure 24. Alternate Synchronous ProgramOperation Timngs..... 52
Figure 25. Chip/Sector Erase Command Sequence....................... 53
Figure 26. Accelerated Unlock Bypass ProgrammngTimng......... 54
Figure 27. Data#Polling Timngs (DuringEmbeddedAlgorithm... 55
Figure 28. Toggle Bit Timngs (DuringEmbeddedAlgorithm......... 55
Figure 29. Synchronous Data Polling Timngs/Toggle Bit Timngs. 56
Figure 30. Latency with Boundary Crossing................................... 57
Figure 31. Latency with Boundary Crossing
into Program/Erase Bank................................................................ 58
Figure 32. Example of Wait States Insertion (Standard
HandshakingDevice)..................................................................... 59
Figure 33. Back-to-Back Read/Write Cycle Timngs...................... 60
Erase and Programming Performance . . . . . . . 61
FBGA Ball Capacitance . . . . . . . . . . . . . . . . . . . . 61
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 62
FBE080—80-ball Fine-Pitch Ball Grid Array (FBGA)
11 x 12 mmPackage ..............................................................62
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 63
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