參數(shù)資料
型號: AM29BDS640GTC9WSI
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述: 4M X 16 FLASH 1.8V PROM, 20 ns, PBGA80
封裝: 11 X 12 MM, 0.80 MM PITCH, FBGA-80
文件頁數(shù): 46/65頁
文件大?。?/td> 899K
代理商: AM29BDS640GTC9WSI
October 31, 2002
Am29BDS640G
45
A D V A N C E I N F O R M A T I O N
AC CHARACTERISTICS
Asynchronous Read
Notes:
1. Asynchronous Access Time is from the last of either stable addresses or the falling edge of AVD#.
2. Not 100% tested.
Note:
RA = Read Address, RD = Read Data.
Figure 18.
Asynchronous Mode Read with Latched Addresses
Parameter
Description
D3, D4
D8, D9
C3, C4
C8, C9
Unit
JEDEC
Standard
t
CE
Access Time from CE# Low
Max
70
90
ns
t
ACC
Asynchronous Access Time (Note 1)
Max
70
90
ns
t
AVDP
AVD# Low Time
Min
12
ns
t
AAVDS
Address Setup Time to Rising Edge of AVD
Min
5
ns
t
AAVDH
Address Hold Time from Rising Edge of AVD
Min
7
ns
t
OE
Output Enable to Output Valid
Max
13.5
20
ns
t
OEH
Output Enable Hold
Time
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
t
OEZ
Output Enable to High Z (Note 2)
Max
10
10.5
ns
t
CAS
CE# Setup Time to AVD#
Min
0
ns
t
CE
WE#
A21
-
A0
CE#
OE#
Valid RD
t
ACC
t
OEH
t
OE
DQ15
-
DQ0
t
OEZ
t
AAVDH
t
AVDP
t
AAVDS
AVD#
RA
t
CAS
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