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參數(shù)資料
| 型號(hào)： | ADUC814BRUZ |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 27/72頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC ADC 12BIT W/FLASH MCU 28TSSOP |
| 標(biāo)準(zhǔn)包裝： | 50 |
| 系列： | MicroConverter® ADuC8xx |
| 核心處理器： | 8052 |
| 芯體尺寸： | 8-位 |
| 速度： | 16.78MHz |
| 連通性： | I²C，SPI，UART/USART |
| 外圍設(shè)備： | POR，PSM，溫度傳感器，WDT |
| 輸入/輸出數(shù)： | 17 |
| 程序存儲(chǔ)器容量： | 8KB（8K x 8） |
| 程序存儲(chǔ)器類型： | 閃存 |
| EEPROM 大?。?/td> | 640 x 8 |
| RAM 容量： | 256 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 6x12b; D/A 2x12b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 125°C |
| 封裝/外殼： | 28-TSSOP（0.173"，4.40mm 寬） |
| 包裝： | 管件 |
| 產(chǎn)品目錄頁面： | 738 (CN2011-ZH PDF) |
| 配用： | EVAL-ADUC814QSZ-ND - KIT DEV FOR ADUC814 MICROCONVRTR |
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ADuC814
Rev. A | Page 33 of 72
FLASH/EE MEMORY TIMING
The typical program/erase times for the Flash/EE data memory
are
Erase Full Array (640 bytes)
2 ms
Erase Single Page (4 bytes)
2 ms
Program Page (4 bytes)
250 s
Read Page (4 bytes)
Within single instruction cycle
Using the Flash/EE Memory Interface
As with all Flash/EE memory architectures, the array can be
programmed in-system at a byte level, although it must be
erased first, the erasure being performed in page blocks (4-byte
pages in this case).
A typical access to the Flash/EE data array involves setting up
the page address to be accessed in the EADRL SFR, configuring
the EDATA1–4 with data to be programmed to the array (the
EDATA SFRs are not written to for read accesses), and finally,
writing the ECON command word, which initiates one of the
modes shown Table 11.
Note that a given mode of operation is initiated as soon as the
command word is written to the ECON SFR. The core micro-
controller operation on the ADuC814 is idled until the
requested program/read or erase mode is completed. In
practice, this means that even though the Flash/EE memory
mode of operation is typically initiated with a two-machine
cycle MOV instruction (to write to the ECON SFR), the next
instruction cannot be executed until the Flash/EE operation is
complete (250 s or 2 ms later). This means that the core does
not respond to interrupt requests until the Flash/EE operation is
complete, though the core peripheral functions like counter/
timers continue to count and time as configured throughout
this period. Although the 640-byte user Flash/EE array is
shipped from the factory pre-erased, i.e., byte locations set to
FFH, it is nonetheless good programming practice to include an
ERASE-ALL routine as part of any configuration/setup code
running on the ADuC814. An ERASE-ALL command consists
of writing 06H to the ECON SFR, which initiates an erasure of
all 640 byte locations in the Flash/EE array. This command
coded in 8051 assembly appears as
MOV ECON, #06H
; Erase all Command
; 2 ms Duration
Programming a Byte
In general terms, a byte in the Flash/EE array can be programmed
only if it has been erased previously. To be more specific, a byte
can only be programmed if it already holds the value FFH.
Because of the Flash/EE architecture, this erasure must happen
at a page level; therefore, a minimum of four bytes (1 page) are
erased when an ERASE command is initiated.
A more specific example of the program-byte process is shown
below. In this example the user writes F3H into the second byte
on Page 03H of the Flash/EE data memory space while
preserving the other three bytes already in this page. Because
the user is required to modify only one of the page bytes, the
full page must be first read so that this page can then be erased
without the existing data being lost. This example, coded in
8051 assembly, appears as
MOV EADRL,#03H
; Set Page Address
; Pointer
MOV ECON,#01H
; Read Page
MOV EDATA2,#0F3H
; Write New Byte
MOV ECON,#05H
; Erase Page
MOV ECON,#02H
; Write Page
; Program Flash/EE)
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