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Data Sheet
ADF4002
Rev. C | Page 5 of 20
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
0.3 V to +3.6 V
AVDD to DVDD
0.3 V to +0.3 V
VP to GND
0.3 V to +5.8 V
VP to AVDD
0.3 V to +5.8 V
Digital I/O Voltage to GND
0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND
0.3 V to VP + 0.3 V
REFIN, RFINA, RFINB to GND
0.3 V to VDD + 0.3 V
RFINA to RFINB
±320 mV
Operating Temperature Range
Industrial (B Version)
40°C to +85°C
Storage Temperature Range
65°C to +125°C
Maximum Junction Temperature
150°C
Lead Temperature, Soldering
Vapor Phase (60 sec)
215°C
Infrared (15 sec)
220°C
Transistor Count
CMOS
6425
Bipolar
303
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
THERMAL CHARACTERISTICS
Table 4. Thermal Impedance
Package Type
θJA
Unit
TSSOP
150.4
°C/W
LFCSP
122
°C/W
ESD CAUTION