Analog Supply Voltage (V
參數(shù)資料
型號： AD8175ABPZ
廠商： Analog Devices Inc
文件頁數(shù)： 38/40頁
文件大?。?/td> 0K
描述： IC CROSSPOINT SWITCH TRPL 676BGA
標(biāo)準(zhǔn)包裝： 1
功能： 交叉點(diǎn)開關(guān)
電路： 3 x 16:9
電壓電源： 單/雙電源
電壓 - 電源，單路/雙路(±)： 4.5 V ~ 5.5 V，±2.5V
電流 - 電源： 600mA
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 676-BGA
供應(yīng)商設(shè)備封裝： 676-BGA（27x27）
包裝： 管件
Data Sheet
AD8175
Rev. B | Page 7 of 40
ABSOLUTE MAXIMUM RATINGS
Table 12.
Parameter
Rating
Analog Supply Voltage (VPOS – VNEG)
+6 V
Digital Supply Voltage (VDD – DGND)
+6 V
Ground Potential Difference
(VNEG – DGND)
+0.5 V to 2.5 V
Maximum Potential Difference
(VDD – VNEG)
+8 V
Common-Mode Analog Input Voltage
(VNEG – 0.5 V)
to (VPOS + 0.5 V)
Differential Analog Input Voltage
±2 V
Digital Input Voltage
VDD
Output Voltage
(Disabled Analog Output)
(VPOS – 1 V) to (VNEG + 1 V)
Output Short-Circuit Duration
Momentary
Storage Temperature
65°C to +125°C
Operating Temperature Range
40°C to +85°C
Lead Temperature (Soldering 10 sec)
300°C
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 13. Thermal Resistance
Package Type
θJA
Unit
PBGA
15
°C/W
POWER DISSIPATION
The AD8175 is operated with ±2.5 V or +5 V supplies and can
drive loads down to 100 Ω, resulting in a large range of possible
power dissipations. For this reason, extra care must be taken
derating the operating conditions based on ambient temperature.
Packaged in a 676-lead BGA, the AD8175 junction-to-ambient
thermal impedance (θJA) is 15°C/W. For long-term reliability,
the maximum allowed junction temperature of the die should
not exceed 150°C. Temporarily exceeding this limit may cause a
shift in parametric performance due to a change in stresses
exerted on the die by the package. Exceeding a junction
temperature of 175°C for an extended period can result in
device failure. The following curve shows the range of allowed
internal die power dissipations that meet these conditions over
the 40°C to +85°C ambient temperature range. When using
Table 12, do not include external load power in the Maximum
Power calculation, but do include load current dropped on the
die output transistors.
06478-
004
AMBIENT TEMPERATURE (°C)
MA
XI
MU
M
PO
W
ER
(W
)
3
4
5
6
7
8
9
10
15
25
35
45
55
65
75
85
TJ = 150°C
Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature
ESD CAUTION
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