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參數(shù)資料
| 型號(hào)： | 934020700127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 80 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, SOT-78, 3 PIN |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 110K |
| 代理商： | 934020700127 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK101-50GS
TOPFET
Fig.14. Typical overload protection characteristics.
Conditions: V
DD = 13 V; VIS = 10 V; SC load = 30 m
Fig.15. Typical clamping characteristics, 25 C.
I
D = f(VDS); conditions: VIS = 0 V; tp ≤ 50 s
Fig.16. Input threshold voltage.
V
IS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V
Fig.17. Typical DC input characteristics, T
j = 25 C.
I
IS = f(VIS); normal operation
Fig.18. Typical DC input characteristics, T
j = 25 C.
I
ISL = f(VIS); overload protection operated ID = 0 A
Fig.19. Typical reverse diode current, T
j = 25 C.
I
S = f(VSDS); conditions: VIS = 0 V; tp = 250 s
-60
-20
20
60
100
140
180
220
Tmb / C
BUK101-50GS
1
0.5
0
Energy / J
Time / ms
Tj(TO)
Energy & Time
0
2
4
6
8
10
12
14
BUK101-50GS
VIS / V
II / mA
1.0
0.5
0
50
60
70
VIS / V
ID / A
BUK101-50GS
30
20
10
0
typ.
0
2
4
6
8
10
12
14
VIS / V
IIS / mA
BUK101-50GS
5
4
3
2
1
0
PROTECTION LATCHED
NORMAL
RESET
-60
-40
-20
0
20
40
60
80
100
120
140
Tj / C
VIS(TO) / V
2
1
0
max.
typ.
min.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD / V
IS / A
BUK101-50GS
120
100
80
60
40
20
0
January 1993
7
Rev 1.200
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