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參數(shù)資料
| 型號(hào)： | 934020700127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 80 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, SOT-78, 3 PIN |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | 934020700127 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK101-50GS
TOPFET
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
R
th j-mb
Junction to mounting base
-
1.3
1.67
K/W
R
th j-a
Junction to ambient
in free air
-
60
-
K/W
STATIC CHARACTERISTICS
T
mb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(CL)DSS
Drain-source clamping voltage
V
IS = 0 V; ID = 10 mA
50
-
V
(CL)DSS
Drain-source clamping voltage
V
IS = 0 V; IDM = 2 A; tp ≤ 300 s;
-
70
V
δ ≤ 0.01
I
DSS
Zero input voltage drain current V
DS = 12 V; VIS = 0 V
-
0.5
10
A
I
DSS
Zero input voltage drain current V
DS = 50 V; VIS = 0 V
-
1
20
A
I
DSS
Zero input voltage drain current V
DS = 40 V; VIS = 0 V; Tj = 125 C
-
10
100
A
R
DS(ON)
Drain-source on-state
I
DM = 13 A;
V
IS = 10 V
-
35
50
m
resistance
t
p ≤ 300 s; δ ≤ 0.01
V
IS = 5 V
-
45
60
m
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Short circuit load protection
1
T
mb = 25 C; L ≤ 10 H
E
DS(TO)
Overload threshold energy
V
DD = 13 V; VIS = 10 V
-
0.4
-
J
t
d sc
Response time
V
DD = 13 V; VIS = 10 V
-
0.8
-
ms
Over temperature protection
T
j(TO)
Threshold junction temperature V
IS = 10 V; from ID ≥ 1 A
2
150
-
C
INPUT CHARACTERISTICS
T
mb = 25 C unless otherwise specified.
The supply for the logic and overload protection is taken from the input.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
IS(TO)
Input threshold voltage
V
DS = 5 V; ID = 1 mA
1.0
1.5
2.0
V
I
IS
Input supply current
V
IS = 10 V; normal operation
-
0.4
1.0
mA
V
ISR
Protection reset voltage
3
2.0
2.6
3.5
V
ISR
Protection reset voltage
T
j = 150 C
1.0
-
I
ISL
Input supply current
V
IS = 10 V; protection latched
1.0
2.5
4.0
mA
V
(BR)IS
Input clamp voltage
I
I = 10 mA
11
13
-
V
R
IG
Input series resistance
to gate of power MOSFET
-
4
-
k
1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P
DSM, which is always the case when VDS is less than VDSP maximum.
Refer to OVERLOAD PROTECTION LIMITING VALUES.
2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
D
ensures this condition.
3 The input voltage below which the overload protection circuits will be reset.
January 1993
3
Rev 1.200
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