- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24682 > 934020700127 (NXP SEMICONDUCTORS) 80 A BUF OR INV BASED PRPHL DRVR, PSFM3 PDF資料下載
參數(shù)資料
| 型號： | 934020700127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 80 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, SOT-78, 3 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 110K |
| 代理商： | 934020700127 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK101-50GS
TOPFET
TRANSFER CHARACTERISTICS
T
mb = 25 C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS = 10 V; IDM = 13 A tp ≤ 300 s;
10
16
-
S
δ ≤ 0.01
I
D(SC)
Drain current
1
V
DS = 13 V; VIS = 10 V
-
80
-
A
SWITCHING CHARACTERISTICS
T
mb = 25 C.
R
I = 50 .
Refer to waveform figures and test circuits.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
Turn-on delay time
V
DD = 13 V; VIS = 10 V
-
1.5
-
s
t
r
Rise time
resistive load R
L = 2.1
-6
-
s
t
d off
Turn-off delay time
V
DD = 13 V; VIS = 0 V
-
18
-
s
t
f
Fall time
resistive load R
L = 2.1
-9
-
s
t
d on
Turn-on delay time
V
DD = 10 V; VIS = 10 V
-
2
-
s
t
r
Rise time
inductive load I
DM = 6 A
-
1
-
s
t
d off
Turn-off delay time
V
DD = 10 V; VIS = 0 V
-
22
-
s
t
f
Fall time
inductive load I
DM = 6 A
-
1
-
s
REVERSE DIODE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
S
Continuous forward current
T
mb ≤ 25 C; VIS = 0 V
-
29
A
REVERSE DIODE CHARACTERISTICS
T
mb = 25 C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
SDS
Forward voltage
I
S = 29 A; VIS = 0 V; tp = 300 s
-
1.0
1.5
V
t
rr
Reverse recovery time
not applicable
2
--
ENVELOPE CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
L
d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
1 During overload before short circuit load protection operates.
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
January 1993
4
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 0597360000 | 24 A, BARRIER STRIP TERMINAL BLOCK, 1 ROW, 1 DECK |
| 934021010127 | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 934021070135 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 934021070115 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 934021360115 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934021780115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 45V 0.1A 3-Pin SC-70 T/R |
| 934026020115 | 制造商:NXP Semiconductors 功能描述:Diode Switching 90V 0.15A 3-Pin SC-70 T/R |
| 934028880135 | 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY 30V 0.2A SC70 |
| 934028900115 | 制造商:NXP Semiconductors 功能描述:Diode Schottky 30V 0.2A 3-Pin SC-70 T/R |
| 93403 | 制造商:Brady Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。