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參數(shù)資料
| 型號(hào)： | 934020700127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 80 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, SOT-78, 3 PIN |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 110K |
| 代理商： | 934020700127 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK101-50GS
TOPFET
Fig.8. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VIS; tp = 250 s
Fig.9. Typical transfer characteristics, T
j = 25 C.
I
D = f(VIS) ; conditions: VDS = 10 V; tp = 250 s
Fig.10. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 10 V; tp = 250 s
Fig.11. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 13 A; VIS = 10 V
Fig.12. Typical overload protection characteristics.
t
d sc = f(PDS); conditions: VIS ≥ 5 V; Tj = 25 C.
Fig.13. Normalised limiting overload dissipation.
P
DSM% =100PDSM/PDSM(25 C) = f(Tmb)
0
20
40
60
80
100
BUK101-50GS
ID / A
RDS(ON) / mOhm
100
50
0
VIS / V = 4
5
6
7
8
9 10 11
-60
-40
-20
0
20
40
60
80
100 120 140
Tj / C
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
2
4
6
8
10
12
BUK101-50GS
VIS / V
ID / A
100
50
0
0.1
1
10
PDS / kW
td sc / ms
BUK101-50GS
100
10
1
0.1
PDSM
0
20
40
60
80
100
BUK101-50GS
ID / A
gfs / S
20
15
10
5
0
-60
-40
-20
0
20
40
60
80
100
120
140
Tmb / C
PDSM%
120
100
80
60
40
20
0
January 1993
6
Rev 1.200
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