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參數(shù)資料
| 型號： | 934020700127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 80 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, SOT-78, 3 PIN |
| 文件頁數(shù)： | 11/11頁 |
| 文件大?。?/td> | 110K |
| 代理商： | 934020700127 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK101-50GS
TOPFET
Fig.26. Normalised limiting clamping energy.
E
DSM% = f(Tmb); conditions: ID = 27 A; VIS = 10 V
Fig.27. Clamping energy test circuit, R
IS = 50 .
Fig.28. Typical off-state leakage current.
I
DSS = f(Tj); Conditions: VDS = 40 V; IIS = 0 V.
Fig.29. Normalised input current (normal operation).
I
IS/IIS25 C = f(Tj); VIS = 10 V
Fig.30. Normalised input current (protection latched).
I
ISL/IISL25 C = f(Tj); VIS = 10 V
Fig.31. Maximum drain source supply voltage for
SC load protection. V
DDP(P) = f(VIS); Tmb ≤ 150 C
0
20
40
60
80
100
120
140
Tmb / C
EDSM%
120
110
100
90
80
70
60
50
40
30
20
10
0
-60
-20
20
60
100
140
180
Tj / C
Iiso normalised to 25 C
1.5
1
0.5
-60
-20
20
60
100
140
180
Tj / C
Iisl normalised to 25 C
1.5
1
0.5
L
D.U.T.
VDD
RIS
R 01
VDS
-ID/100
+
-
shunt
VIS
0
P
D
S
I
TOPFET
ID
0
VDS
0
VDD
V(CL)DSS
Schottky
E
DSM = 0.5 LID
2
V
(CL)DSS/(V(CL)DSS VDD)
0
20
40
60
80
100
120
140
Tj / C
Idss
1 mA
100 uA
10 uA
1 uA
100 nA
typ.
0
2
4
6
8
10
VIS / V
VDDP(P) / V
BUK101-50GS
50
40
30
20
10
0
max
January 1993
9
Rev 1.200
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