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參數(shù)資料
| 型號(hào)： | 934020700127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 80 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, SOT-78, 3 PIN |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | 934020700127 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK101-50GS
TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Continuous off-state drain source
V
IS = 0 V
-
50
V
voltage
1
V
IS
Continuous input voltage
-
0
11
V
I
D
Continuous drain current
T
mb ≤ 25 C; VIS = 10 V
-
29
A
I
D
Continuous drain current
T
mb ≤ 100 C; VIS = 10 V
-
18
A
I
DRM
Repetitive peak on-state drain current
T
mb ≤ 25 C; VIS = 10 V
-
120
A
P
D
Total power dissipation
T
mb ≤ 25 C
-
75
W
T
stg
Storage temperature
-
-55
150
C
T
j
Continuous junction temperature
2
normal operation
-
150
C
T
sold
Lead temperature
during soldering
-
250
C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
ISP
Protection supply voltage
3
for valid protection
5
-
V
Over temperature protection
V
DDP(T)
Protected drain source supply voltage
V
IS = 10 V
-
50
V
Short circuit load protection
V
DDP(P)
Protected drain source supply voltage
4
V
IS = 10 V
-
20
V
IS = 5 V
-
35
V
P
DSM
Instantaneous overload dissipation
T
mb = 25 C
-
1.3
kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
DROM
Repetitive peak clamping current
V
IS = 0 V
-
29
A
E
DSM
Non-repetitive clamping energy
T
mb ≤ 25 C; IDM = 27 A;
-
625
mJ
V
DD ≤ 20 V; inductive load
E
DRM
Repetitive clamping energy
T
mb ≤ 95 C; IDM = 8 A;
-
40
mJ
V
DD ≤ 20 V; f = 250 Hz
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher T
j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 The input voltage for which the overload protection circuits are functional.
4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V
DDP(P) maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
January 1993
2
Rev 1.200
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