參數(shù)資料
型號： 71V25761SA200BG
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 128K X 36 CACHE SRAM, 3.1 ns, PBGA119
封裝： BGA-119
文件頁數(shù)： 5/22頁
文件大?。?/td> 627K
代理商： 71V25761SA200BG
6.42
IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
13
NOTES:
1.
O1
(Ax)
represents
the
first
output
from
the
external
address
Ax.
O1
(Ay)
represents
the
first
output
from
the
external
addr
ess
Ay;
O2
(Ay)
represents
the
next
output
data
in
the
burst
sequence
of
the
base
address
Ay,
etc.
where
A0
and
A1
are
advancing
for
the
four
word
burst
in
the
sequence
defined
by
the
state
of
the
LBO
input.
2.
ZZ
input
is
LOW
and
LBO
is
Don't
Care
for
this
cycle.
3.
C
S
0timing
transitions
are
identical
but
inverted
to
the
CE
and
CS
1
signals.
For
example,
when
CE
and
CS
1are
LOW
on
this
waveform,
CS
0is
HIGH.
Timing Waveform of Pipeline Read Cycle(1,2)
tC
H
Z
tS
A
tS
C
tH
S
G
W
,B
W
E
,B
W
x
tS
W
tC
L
tS
A
V
tH
W
tH
A
V
C
L
K
A
D
S
C
(1
)
A
D
R
E
S
tC
Y
C
tC
H
tH
A
tH
C
tO
E
tO
H
Z
O
E
tC
D
tO
L
Z
O
1
(A
x
)
D
A
T
A
O
U
T
tC
D
C
O
1
(A
y
)
O
3
(A
y
)
O
2
(A
y
)
O
2
(A
y
)
tC
L
Z
A
D
V
C
E
,
C
S
1
(N
o
te
3
)
P
ip
e
lin
e
d
R
e
a
d
B
u
rs
t
P
ip
e
lin
e
d
R
e
a
d
O
u
tp
u
t
D
is
a
b
le
d
A
x
A
y
tS
S
O
1
(A
y
)
(B
u
rs
t
w
ra
p
s
a
ro
u
n
d
to
it
s
in
it
ia
l
s
ta
te
)
O
4
(A
y
)
5
2
9
7
d
rw
0
8
A
D
S
P
A
D
V
H
IG
H
s
u
s
p
e
n
d
s
b
u
rs
t
,
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參數(shù)描述
71V25761YS200PFG 功能描述:IC SRAM 4.5MBIT 200MHZ 100TQFP 制造商:idt, integrated device technology inc 系列:- 包裝:托盤 零件狀態(tài):過期 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M（128K x 36） 速度:200MHz 接口:并聯(lián) 電壓 - 電源:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C（TA） 封裝/外殼:100-LQFP 供應(yīng)商器件封裝:100-TQFP（14x20） 標(biāo)準(zhǔn)包裝:72
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71V2576S150PF8 制造商:Integrated Device Technology Inc 功能描述:71V2576S150PF8, 4.5MBIT SRAM CHIP SYNC SINGLE 3.3V 128K X 36 - Trays 制造商:Integrated Device Technology Inc 功能描述:IDT 71V2576S150PF8, 4.5MBit SRAM Chip Sync Single 3.3V 128K x 36 3.8ns 100-Pin TQFP T/R
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