參數(shù)資料
型號(hào)： 71V25761SA200BG
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 128K X 36 CACHE SRAM, 3.1 ns, PBGA119
封裝： BGA-119
文件頁數(shù)： 3/22頁
文件大?。?/td> 627K
代理商： 71V25761SA200BG
6.42
IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
11
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
1
0
1
Second Address
0
1
0
1
0
Third Address
1
0
1
0
1
Fourth Address(1)
111
00
1
0
5297 tbl 14
Linear Burst Sequence Table (LBO=VSS)
Synchronous Write Function Truth Table(1, 2)
Asynchronous Truth Table(1)
Interleaved Burst Sequence Table (LBO=VDD)
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2.
BW3 and BW4 are not applicable for the IDT71V2578.
3. Multiple bytes may be selected during the same cycle.
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. Synchronous function pins must be biased appropriately to satisfy operation requirements.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
Operation
GW
BWE
BW1
BW2
BW3
BW4
Read
H
XXX
X
Read
H
L
HH
Write all Bytes
L
XXXX
X
Write all Bytes
H
LL
LLL
Write Byte 1(3)
HL
L
HH
H
Write Byte 2(3)
HL
H
L
H
Write Byte 3(3)
HL
H
L
H
Write Byte 4(3)
HL
H
HHL
5297 tbl 12
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
1
0
1
Second Address
0
1
0
1
0
Third Address
1
0
1
0
1
Fourth Address(1)
11
000
11
0
5297 tbl 15
Operation(2)
OE
ZZ
I/O Status
Power
Read
L
Data Out
Active
Read
H
L
High-Z
Active
Write
X
L
High-Z – Data In
Active
Deselected
X
L
High-Z
Standby
Sleep Mode
X
H
High-Z
Sleep
5297 tbl 13
相關(guān)PDF資料
PDF描述
7P2FLV242I15 1M X 16 FLASH 3V PROM CARD, 150 ns, XMA68
7P2FLV520C25 1M X 16 FLASH 3V PROM CARD, 250 ns, XMA68
7P6FLV242C25 3M X 16 FLASH 3V PROM CARD, 250 ns, XMA68
7P2FLV212I15 1M X 16 FLASH 3V PROM CARD, 150 ns, XMA68
7P2FLV522I15 1M X 16 FLASH 3V PROM CARD, 150 ns, XMA68
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
71V25761YS200PFG 功能描述:IC SRAM 4.5MBIT 200MHZ 100TQFP 制造商:idt, integrated device technology inc 系列:- 包裝:托盤 零件狀態(tài):過期 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:4.5M（128K x 36） 速度:200MHz 接口:并聯(lián) 電壓 - 電源:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C（TA） 封裝/外殼:100-LQFP 供應(yīng)商器件封裝:100-TQFP（14x20） 標(biāo)準(zhǔn)包裝:72
71V2576S133PFG 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 4.2ns 100-Pin TQFP Tray
71V2576S133PFG8 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 4.2ns 100-Pin TQFP T/R
71V2576S150PF8 制造商:Integrated Device Technology Inc 功能描述:71V2576S150PF8, 4.5MBIT SRAM CHIP SYNC SINGLE 3.3V 128K X 36 - Trays 制造商:Integrated Device Technology Inc 功能描述:IDT 71V2576S150PF8, 4.5MBit SRAM Chip Sync Single 3.3V 128K x 36 3.8ns 100-Pin TQFP T/R
71V30L25TF 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*