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  • 參數(shù)資料
    型號: 71V25761SA200BG
    廠商: INTEGRATED DEVICE TECHNOLOGY INC
    元件分類: SRAM
    英文描述: 128K X 36 CACHE SRAM, 3.1 ns, PBGA119
    封裝: BGA-119
    文件頁數(shù): 22/22頁
    文件大?。?/td> 627K
    代理商: 71V25761SA200BG
    6.42
    IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
    2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
    Commercial and Industrial Temperature Ranges
    9
    DC Electrical Characteristics Over the Operating
    Temperature and Supply Voltage Range(1)
    DC Electrical Characteristics Over the Operating
    Temperature and Supply Voltage Range (VDD = 3.3V ± 5%)
    Figure 2. Lumped Capacitive Load, Typical Derating
    Figure 1. AC Test Load
    AC Test Load
    AC Test Conditions
    (VDDQ = 2.5V)
    NOTES:
    1. All values are maximum guaranteed values.
    2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC while
    ADSC = LOW; f=0 means no input lines are changing.
    3. For I/Os VHD = VDDQ - 0.2V, VLD = 0.2V. For other inputs VHD = VDD - 0.2V, VLD = 0.2V.
    VDDQ/2
    50
    I/O
    Z0 =50
    5297 drw 06
    ,
    1
    2
    3
    4
    20 30 50
    100
    200
    tCD
    (Typical, ns)
    Capacitance (pF)
    80
    5
    6
    5297 drw 07
    ,
    Symbol
    Parameter
    Test Conditions
    Min.
    Max.
    Unit
    |ILI|
    Input Leakage Current
    VDD = Max., VIN = 0V to VDD
    ___
    5 A
    |ILZZ|
    ZZ,
    LBO and JTAG Input Leakage Current(1)
    VDD = Max., VIN = 0V to VDD
    ___
    30
    A
    |ILO|
    Output Leakage Current
    VOUT = 0V to VDDQ, Device Deselected
    ___
    5 A
    VOL
    Output Low Voltage
    IOL = +6mA, VDD = Min.
    ___
    0.4
    V
    VOH
    Output High Voltage
    IOH = -6mA, VDD = Min.
    2.0
    ___
    V
    5297 tbl 08
    Symbol
    Parameter
    Test Conditions
    200MHz
    183MHz
    166MHz
    Unit
    Com'l Only
    Com'l
    Ind
    Com'l
    Ind
    IDD
    Operating Power Supply
    Current
    Device Selected, Outputs Open, VDD = Max.,
    VDDQ = Max., VIN > VIH or < VIL, f = fMAX(2)
    360
    340
    350
    320
    330
    mA
    ISB1
    CMOS Standby Power
    Supply Current
    Device Deselected, Outputs Open, VDD = Max.,
    VDDQ = Max., VIN > VHD or < VLD, f = 0(2,3)
    30
    35
    30
    35
    mA
    ISB2
    Clock Running Power
    Supply Current
    Device Deselected, Outputs Open, VDD = Max.,
    VDDQ = Max., VIN > VHD or < VLD, f = fMAX(2,3)
    130
    120
    130
    110
    120
    mA
    IZZ
    Full Sleep Mode Supply
    Current
    ZZ > VHD, VDD = Max.
    30
    35
    30
    35
    mA
    5297 tbl 09
    Input Pulse Levels
    Input Rise/Fall Times
    Input Timing Reference Levels
    Output Timing Reference Levels
    AC Test Load
    0 to 2.5V
    2ns
    (VDDQ/2)
    See Figure 1
    5297 tbl 10
    NOTE:
    1. The
    LBO, TMS, TDI, TCK and TRST pins will be internally pulled to VDD and the ZZ pin will be internally pulled to VSS if they are not actively driven in the application.
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