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| 型號(hào)： | 48SD6404 |
| 廠商： | Maxwell Technologies, Inc |
| 英文描述： | CAP 2.2UF 50V CERAMIC MONO 20% |
| 中文描述： | 256 MB的SDRAM的16梅格× 4位× 4，銀行 |
| 文件頁(yè)數(shù)： | 25/42頁(yè) |
| 文件大?。?/td> | 596K |
| 代理商： | 48SD6404 |
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48SD6404
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All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved.
256Mb (16-Meg X 4-Bit X 4-Banks) SDRAM
01.11.05 Rev 2
1. Different bank: When some banks are in the active state, the second read command (another bank) is
executed. However, in the case of a burst write, data will continue to be written until one clock before the
read command is executed. The internal auto precharge of one bank starts at the next clock of the second
command.
Write with Auto Precharge to Read command Interval (Different bank)
2. Same Bank: The consecutive read command from write with auto precharge (the same bank) is illegal. It
is necessary to separate the two commands with a bank active command.
Read command to Precharge command Interval (same bank)
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| 48SD6404RPFE | 制造商:MAXWELL 制造商全稱(chēng):Maxwell Technologies 功能描述:256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks |
| 48SD6404RPFH | 制造商:MAXWELL 制造商全稱(chēng):Maxwell Technologies 功能描述:256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks |
| 48SD6404RPFI | 制造商:MAXWELL 制造商全稱(chēng):Maxwell Technologies 功能描述:256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks |
| 48SD6404RPFK | 制造商:MAXWELL 制造商全稱(chēng):Maxwell Technologies 功能描述:256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks |
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