參數(shù)資料
型號: 48SD6404
廠商: Maxwell Technologies, Inc
英文描述: CAP 2.2UF 50V CERAMIC MONO 20%
中文描述: 256 MB的SDRAM的16梅格× 4位× 4,銀行
文件頁數(shù): 24/42頁
文件大?。?/td> 596K
代理商: 48SD6404
48SD6404
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All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved.
256Mb (16-Meg X 4-Bit X 4-Banks) SDRAM
01.11.05 Rev 2
1. Different bank: When some banks are in the active state, the second write command (another bank) is
executed. However, DQM must be set High so that the output buffer becomes High-Z before data input. The
internal auto-precharge of one bank starts at the next clock of the second command.
Read with Auto Precharge to Write Command Interval (Different bank)
2. Same bank: The consecutive write command from read with auto precharge ( the same bank) is illegal. It
is necessary to separate the two commands with a bank active command.
Write with Auto Precharege to Read command interval
相關(guān)PDF資料
PDF描述
48TQFP 48 PIN TQFP/TQN PACKAGE OUTLINE
4900 Dual Winding Surface Mount Inductors
49502-0200 1.25 W/B Conn. Housing(New)
49502-0500 1.25 W/B Conn. Housing(New)
49680 Dual Winding Surface Mount Inductors
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