參數(shù)資料
型號(hào): 28F160F3
英文描述: 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
中文描述: 快速啟動(dòng)塊閃存的8和16兆比特
文件頁數(shù): 6/47頁
文件大?。?/td> 277K
代理商: 28F160F3
FAST BOOT BLOCK DATASHEET
E
6
PRODUCT PREVIEW
2.0
PRODUCT DESCRIPTION
This section describes the pinout and block
architecture of the device family.
2.1
Pinouts
Intel’s Fast Boot Block flash memory family
provides upgrade paths in each package pinout up
to the 16-Mbit density. The family is available in
μ
BGA CSP and 56-lead SSOP packages. Pinouts
for the 8- and 16-Mbit components are illustrated in
Figures 1 and 2.
2.2
Pin Description
The pin description table describes pin usage.
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
10
A
14
A
15
A
12
A
11
A
8
GND
A
20
WE#
CLK
V
CC
A
19
V
PP
A
17
A
5
A
4
A
13
A
10
A
21
A
18
A
7
A
6
A
1
A
2
A
3
A
9
WP#
RST#
ADV#
V
CCQ
DQ
7
DQ
12
DQ
10
DQ
9
DQ
0
CE#
DQ
13
DQ
11
DQ
4
A
16
DQ
15
DQ
6
DQ
2
DQ
1
OE#
WAIT#
GND
DQ
14
GND
V
CCQ
DQ
8
GND
A
0
DQ
5
DQ
3
V
CC
16M
32M
64M
NOTES:
1.
Shaded connections indicate upgrade address connections. Lower density devices will not have upper address solder
balls. Routing is not recommended in this area.
A
20
and A
21
are the upgrade address for potential 32-Mbit and 64-Mbit devices (currently not on road map).
Reference the Micro Ball Grid Array Package Mechanical Specification and Media Information
on Intel’s World Wide Web
home page for detailed package specifications.
2.
3.
Figure 1. 56-Ball
μBGA* Package Pinout (Top View, Ball Down)
相關(guān)PDF資料
PDF描述
28F800F3 3 Volt Fast Boot Block Flash Memory(3 V 8M位快速引導(dǎo)塊閃速存儲(chǔ)器)
28F160F3 16MBIT Fast Boot Block Flash Memory(16兆位的快速引導(dǎo)塊閃速存儲(chǔ)器)
28F2001BX-T 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
28F256 FASTENERS, TIES CABLE
28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
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