參數(shù)資料
型號： 28F160F3
英文描述： 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
中文描述： 快速啟動塊閃存的8和16兆比特
文件頁數(shù)： 41/47頁
文件大小： 277K
代理商： 28F160F3
E
8.8
FAST BOOT BLOCK DATASHEET
41
PRODUCT PREVIEW
Extended Temperature Block Erase And Program Performance
(3, 4, 5)
2.7 V V
PP
12 V V
PP
#
Sym
t
WHRH1
, Program Time
t
Block Program Time (Parameter)
Block Program Time (Main)
t
WHRH2
, Block Erase Time (Parameter)
t
EHRH2
Block Erase Time (Main)
t
WHRH5
,
t
EHRH5
t
WHRH6
,
t
EHRH6
Parameter
Notes
2
2
2
2
2
Typ
(1)
23.5
0.10
0.8
1
1.8
6
Max
200
0.30
2.4
4
5
10
Typ
(1)
8
0.03
0.24
0.8
1.1
5
Max
185
0.10
0.8
4
5
10
Unit
μs
sec
sec
sec
sec
μs
W19
Program Suspend Latency
Erase Suspend Time
13
20
10
12
μs
NOTES:
1.
2.
3.
4.
5.
Typical values measured at T
A
= +25 °C and nominal voltages. Subject to change based on device characterization.
Excludes system-level overhead.
These performance numbers are valid for all speed versions.
Sampled, but not 100% tested.
Reference the
AC Waveform for Write Operations
Figure 20.
8.9
Automotive Temperature Operating Conditions
Except for the specifications given in this section, all DC and AC characteristics are identical to those listed in
the extended temperature specifications. See Section 7.2 for extended temperature specifications.
Symbol
Parameter
Notes
Min
Max
Unit
T
A
Operating Temperature
-40
+125
°C
V
CC1
V
CC
Supply Voltage
1
3.0
3.6
V
V
CCQ1
I/O Voltage
1,2
3.0
3.6
V
V
PPH1
V
PP
Supply Voltage
1
3.0
3.6
V
V
PPH2
V
PP
Supply Voltage
1,3
11.4
12.6
V
Cycling
Parameter Block Erase Cycling
30,000
Cycles
Main Block Erase Cycling
1,000
Cycles
NOTES:
1.
2.
3.
See DC Characteristics tables for voltage range-specific specifications.
The voltage swing on the inputs, V
IN
is required to match V
CCQ
.
Applying V
= 11.4 V
–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on the main and
parameter blocks. A hard connection to V
PP
= 11.4 V–12.6 V is not allowed and can cause damage to the device.
相關(guān)PDF資料
PDF描述
28F800F3 3 Volt Fast Boot Block Flash Memory(3 V 8M位快速引導(dǎo)塊閃速存儲器)
28F160F3 16MBIT Fast Boot Block Flash Memory(16兆位的快速引導(dǎo)塊閃速存儲器)
28F2001BX-T 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
28F256 FASTENERS, TIES CABLE
28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F160F3B95 制造商:Intel 功能描述:
28F160S3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY
28F160S3HTL10A 制造商: 功能描述: 制造商:undefined 功能描述:
28F160S3HT-L10A 制造商: 功能描述: 制造商:undefined 功能描述:
28F160S3HT-L75A 制造商: 功能描述: 制造商:undefined 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*