- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368730 > 16F871 (Microchip Technology Inc.) CAT 5E CROSSOVER PATCH CORD CABLE GREEN 6 FT PDF資料下載
參數(shù)資料
| 型號(hào)： | 16F871 |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | CAT 5E CROSSOVER PATCH CORD CABLE GREEN 6 FT |
| 中文描述： | 28/40-Pin 8位CMOS閃存微控制器 |
| 文件頁(yè)數(shù)： | 44/156頁(yè) |
| 文件大?。?/td> | 2816K |
| 代理商： | 16F871 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)當(dāng)前第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)第129頁(yè)第130頁(yè)第131頁(yè)第132頁(yè)第133頁(yè)第134頁(yè)第135頁(yè)第136頁(yè)第137頁(yè)第138頁(yè)第139頁(yè)第140頁(yè)第141頁(yè)第142頁(yè)第143頁(yè)第144頁(yè)第145頁(yè)第146頁(yè)第147頁(yè)第148頁(yè)第149頁(yè)第150頁(yè)第151頁(yè)第152頁(yè)第153頁(yè)第154頁(yè)第155頁(yè)第156頁(yè)
PIC16F870/871
DS30569A-page 44
Preliminary
1999 Microchip Technology Inc.
4.7
Write Verify
Depending on the application, good programming prac-
tice may dictate that the value written to the memory
should be verified against the original value. This
should be used in applications where excessive writes
can stress bits near the specification limit.
Generally a write failure will be a bit which was written
as a ’1’, but reads back as a ’0’ (due to leakage off the
bit).
4.8
Protection Against Spurious Write
4.8.1
EEPROM DATA MEMORY
There are conditions when the device may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been built-in. On power-up, the WREN bit is cleared.
Also, the Power-up Timer (72 ms duration) prevents
EEPROM write.
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch, or software malfunction.
4.8.2
PROGRAM FLASH MEMORY
To protect against spurious writes to FLASH program
memory, the WRT bit in the configuration word may be
programmed to ‘0’ to prevent writes. The write initiate
sequence must also be followed. WRT and the configu-
ration word cannot be programmed by user code, only
through the use of an external programmer.
4.9
Operation during Code Protect
Each reprogrammable memory block has its own code
protect mechanism. External Read and Write opera-
tions are disabled if either of these mechanisms are
enabled.
4.9.1
DATA EEPROM MEMORY
The microcontroller itself can both read and write to the
internal Data EEPROM, regardless of the state of the
code protect configuration bit.
When data memory is code protected (CONFIG<8>=0)
any further external programming access of program
memory is disabled. To reenable programming access
to program memory, both bulk erase and removal of
code protection must be performed on program and
data memory.
4.9.2
PROGRAM FLASH MEMORY
The microcontroller can read and execute instructions
out of the internal FLASH program memory, regardless
of the state of the code protect configuration bits. How-
ever, the WRT configuration bit and the code protect
bits have different effects on writing to program mem-
ory. Table 4-1 shows the various configurations and
status of reads and writes. To erase the WRT or code
protection bits in the configuration word requires that
the device be fully erased.
TABLE 4-1:
READ/WRITE STATE OF INTERNAL FLASH PROGRAM MEMORY
Configuration Bits
Memory Location
Internal
Read
Internal
Write
ICSP Read
ICSP Write
CP1
CP0
WRT
0
0
1
1
0
0
1
1
1
0
0
1
All program memory
All program memory
All program memory
All program memory
Yes
Yes
Yes
Yes
Yes
No
No
Yes
No
No
Yes
Yes
No
No
Yes
Yes
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 16F872 | CAT 5E CROSSOVER PATCH CORD CABLE GREEN 10 FT |
| 16F876A | 28/40-pin Enhanced FLASH Microcontrollers |
| 16F876 | CAT 5E CROSSOVER, GREEN 15 FT PATCH CABLE |
| 16F877 | CAT 5E CROSSOVER PATCH CORD CABLE GREEN 20 FT |
| 16FL100S02 | 6A, 12A AND 16A FAST RECOVERY RECTIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 16F872 | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:28-Pin, 8-Bit CMOS FLASH Microcontroller |
| 16F876 | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:28/40-pin 8-Bit CMOS FLASH Microcontrollers |
| 16F876A | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:28/40-pin Enhanced FLASH Microcontrollers |
| 16F877 | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:28/40-pin 8-Bit CMOS FLASH Microcontrollers |
| 16F9040 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:COMPACT DIGITALMULTIMETER TRUE RMS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。