參數(shù)資料
型號(hào): μPD481850
廠商: NEC Corp.
英文描述: Synchronous Graphics Memory (SGRAM)(8M 同步圖形存儲(chǔ)器)
中文描述: 同步圖形存儲(chǔ)器(SGRAM)(8分同步圖形存儲(chǔ)器)
文件頁(yè)數(shù): 8/94頁(yè)
文件大?。?/td> 1180K
代理商: ΜPD481850
Preliminary Data Sheet
8
μ
PD481850 for Rev.L
2. Commands
Mode register set command
(/CS, /RAS, /CAS, /WE, DSF = Low)
The
μ
PD481850 has a mode register that defines how the device operates.
In this command, A0 through A9 are the data input pins. After power on,
the mode register set command must be executed to initialize the device.
The mode register can be set only when both banks are in idle state.
During 2
CLK (t
RSC
) following this command, the
μ
PD481850 cannot
accept any other commands.
Refer to
6. Programming the Mode Register
.
Bank activate command
(/CS, /RAS, /DSF = Low, /CAS, /WE = High)
The
μ
PD481850 has two banks, each with 512 rows.
This command activates the bank selected by A9 (BA) and a row address
selected by A0 through A8.
This command corresponds to a conventional DRAM’s /RAS falling.
Bank activate command with WPB enable
(/CS, /RAS = Low, /CAS, /WE, /DSF = High)
This command is same as Bank activate command. After this command,
write per bit function is available. Mask register’s data is used as write
mask data.
Refer to
12. Write/Block Write with Write Per Bit
.
Fig.1 Mode register set
command
Add
A8
A9
/WE
/CAS
/RAS
/CS
CKE
CLK
H
DSF
Fig.2 Row address strobe and
bank activate command
Add
A8
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Row
Row
(Bank address)
DSF
Fig.3 Row address strobe and
bank activate command
with WPB enable
Add
A8
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Row
Row
(Bank address)
DSF
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