參數(shù)資料
型號： μPD481850
廠商： NEC Corp.
英文描述： Synchronous Graphics Memory (SGRAM)(8M 同步圖形存儲器)
中文描述： 同步圖形存儲器（SGRAM）（8分同步圖形存儲器）
文件頁數(shù)： 34/94頁
文件大?。?/td> 1180K
代理商： ΜPD481850
Preliminary Data Sheet
34
μ
PD481850 for Rev.L
12. Write/Block Write with Write Per Bit
12.1 Write Per Bit
The write per bit function writes data using the write mask data only in the required DQi pins. It writes when the
write mask data is “1” and prohibits writing when the data is “0”. (Refer to
8.2 Mask Register
).
To use WPB operation
(1)
Execute Special register set command and set WPB data (32 bits) to mask register.
(2)
Execute Bank Activate with WPB enable command (ACTWPB) after t
RSC
(2
CLK) period from Special register
set command (SRS).
(3)
Execute Write/Block write command after t
RCD
period from ACTWPB.
In case SRS command is executed in activate state to set new WPB data, it is necessary to take t
RSC
(2
CLK)
interval between SRS and Write/Block write command.
Remark
Mask data = Mask register’s data (WPB) + DQMi
DQMi is prior to Mask register’s data (WPB)
13. Block Write
13.1 Block Write
This cycle writes the color register data in 256 bits (8 columns x 32 I/Os) memory cell in one cycle. The memory
cell range in which data can be written in one block write cycle is eight continuous columns on one row address.
This cycle controls writing in 8 columns x 8
DQ = 64 bits by DQM0 to DQM3 input. Color register data is written
to the memory cell if DQM is low but not if DQM is high. DQM0 corresponds to the lowest byte (DQ0 to DQ7),
DQM1 corresponds to DQ8 to DQ15, DQM2 corresponds to DQ16 to DQ23, DQM3 corresponds to DQ24 to DQ31.
Any column of the eight columns can be selected and writing prohibited. Determine whether to write or prohibit
writing according to the data selected for column. (Refer to
13.2 Column Mask
)
To use Block write operation
(1)
Execute Special register set command and set color data (32 bits) to color register.
(2)
Execute Bank Activate (ACT) or Bank Activate with WPB enable command (ACTWPB) after t
RSC
(2
CLK) period
from SRS.
(3)
Execute Block write command after t
RCD
period from ACT or ACTWPB.
In case new Write/Block write is executed or, it is necessary to take t
BWC
interval from Block Write command to
new Write/Block write command.
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