參數(shù)資料
型號: μPD481850
廠商: NEC Corp.
英文描述: Synchronous Graphics Memory (SGRAM)(8M 同步圖形存儲器)
中文描述: 同步圖形存儲器(SGRAM)(8分同步圖形存儲器)
文件頁數(shù): 10/94頁
文件大?。?/td> 1180K
代理商: ΜPD481850
Preliminary Data Sheet
10
μ
PD481850 for Rev.L
CBR (auto) refresh command
(/CS, /RAS, /CAS, DSF = Low, /WE, CKE = High)
This command is a request to begin the CBR refresh operation. The
refresh address is generated internally.
Before executing CBR refresh, both banks must be precharged.
After this cycle, both banks will be in the idle (precharged) state and ready
for a bank activate command.
During t
RC
period (from refresh command to refresh or activate command),
the
μ
PD481850 cannot accept any other command.
Self refresh entry command
(/CS, /RAS, /CAS, DSF, CKE = Low, /WE = High)
After the command execution, self refresh operation continues while CKE
remains low. When CKE goes high, the
μ
PD481850 exits the self refresh
mode.
During self refresh mode, refresh interval and refresh operation are
performed internally, so there is no need for external control.
Before executing self refresh, both banks must be precharged.
Burst stop command in full page
(/CS, /WE, DSF = Low, /RAS, /CAS = High)
This command can stop the current full page burst (BL = 256) operation.
If BL is set to 2, 4, 8, to execute this command is Nop.
Refer to
14. Read/Write Command Interval
and
15. Burst Termination
.
Fig.7 CBR (auto) refresh
command
Add
A8
/WE
/CAS
/RAS
/CS
CKE
CLK
H
(Bank address)
DSF
Fig.8 Self refresh entry
command
Add
A8
A9
/WE
/CAS
/RAS
/CS
CKE
CLK
(Bank address)
DSF
Fig.9 Burst stop command in
Full Page Mode
Add
A8
/WE
/CAS
/RAS
/CS
CKE
CLK
(Bank address)
H
DSF
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