參數(shù)資料
型號(hào): ZXRD1050PQ16TA
英文描述: IC-SM-DC/DC CONTROLLER
中文描述: IC-SM-DC/DC控制器
文件頁(yè)數(shù): 7/28頁(yè)
文件大?。?/td> 639K
代理商: ZXRD1050PQ16TA
Applications
Note: Component names refer to designators shown
in the application circuit diagrams.
Output Capacitors
Output capacitors are a critical choice in the overall
performance of the solution. They are required to filter
the output and supply load transient current. They are
also affected by the switching frequency, ripple
current, di/dt and magnitude of transient load current.
ESR plays a key role in determining the value of
capacitor to be used. Combination of both high
frequency, low value ceramic capacitors and low ESR
bulk storage capacitors optimised for switching
applications provide the best response to load
transients and ripple requirements. Electrolytic
capacitors with low ESR are larger and more
expensive so the ultimate choice is always a
compromise between size, cost and performance.
Care must also be taken to ensure that for large
capacitors, the ESL of the leads does not become an
issue. Excellent low ESR tantalum or electrolytic
capacitors are available from Sanyo OS-CON, AVX,
Sprague and Nichicon.
The output capacitor will also affect loop stability,
transient performance. The capacitor ESR should
preferably be of a similar value to the sense resistor.
Parallel devices may be required.
I
RIPPLE RMS
0.29 V
OUT
V
IN
V
OUT
L f V
IN
where L= output filter inductance
f= switching frequency
For output voltage ripple it is necessary to know the
peak ripple current which is given by:
I
pk pk
V
OUT
V
IN
V
OUT
L
f V
IN
Voltage ripple is then:-
V
RIPPLE
I
pk
pk
ESR
Input Capacitors
The input capacitor is chosen for its RMS current and
voltage rating. The use of low ESR electrolytic or
tantalum capacitors is recommended. Tantalum
capacitors should have their voltage rating at 2V
IN
(max), electrolytic at 1.4V
IN
(max). I
RMS
can be
approximated by:
I
RMS
I
OUT
V
OUT
V
IN
V
OUT
V
IN
Underspecification of this parameter can affect long
term reliability. An additonal ceramic capacitor should
be used to provide high frequency decoupling at V
IN.
Also note that the input capacitance ESR is effectively in
series with the input and hence contributes to efficiency
losses related to I
RMS2
* ESR of the input capacitor.
MOSFET Selection
The ZXRD1000 family can be configured in circuits
where either N or P channel MOSFETs are employed
as the main switch. If an N channel device is used, the
corresponding N phase controller must be chosen.
Similarly, for P channel main switch a P phase
controller must be used. The ordering information has
a clear identifier to distinguish between N and P phase
controllers.
The MOSFET selection is subject to thermal and gate
drive considerations. Care also has to be taken to allow
for transition losses at high input voltages as well as
R
DS(ON)
losses for the main MOSFET. It is
recommended that a device with a drain source
breakdown of at least 1.2 times the maximum V
IN
should be used.
For optimum efficiency , two N channel low R
DS(on)
devices are required. MOSFETs should be selected
with the lowest R
DS(ON)
consistent with the output
current required. As a guide, for 3-4A output, <50m
devices would be optimum, provided the devices are
low gate threshold and low gate charge. Typically look
for devices that will be fully enhanced with 2.7V V
GS
for 4-5A capability.
Zetex offers a range of low R
DS(ON)
logic level MOSFETs
which are specifically designed with DC-DC power
conversion in mind. Packaging includes SOT23,
SOT23-6 and MSOP8 options. Ideal examples of
optimum devices would be Zetex ZXM64N03X and
ZXM64N02X (N channel). Contact your local Zetex office
or Zetex web page for further information.
7
ZXRD1000 SERIES
ISSUE 3 - MAY 2000
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