參數(shù)資料
型號: ZXRD1050PQ16TA
英文描述: IC-SM-DC/DC CONTROLLER
中文描述: IC-SM-DC/DC控制器
文件頁數(shù): 25/28頁
文件大?。?/td> 639K
代理商: ZXRD1050PQ16TA
25
ELECTRICAL CHARACTERISTICS (at T
amb
= 25
°
C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
20
V
I
D
=250 A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A
V
DS
=20V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
= 12V,
V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
0.7
V
I
D
=250 A, V
DS
=
V
GS
Static Drain-Source On-State
Resistance (1)
R
DS(on)
0.040
0.050
V
GS
=4.5V, I
D
=3.8A
V
GS
=2.7V, I
D
=1.9A
Forward Transconductance (3)
g
fs
6.1
S
V
DS
=10V,I
D
=1.9A
DYNAMIC (3)
Input Capacitance
C
iss
1100
pF
V
DS
=15 V,
V
GS
=0V, f=1MHz
Output Capacitance
C
oss
350
pF
Reverse Transfer Capacitance
C
rss
100
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
5.7
ns
V
DD
=10V, I
D
=3.8A
R
=6.2 , R
=2.6
(Refer to test
circuit)
Rise Time
t
r
9.6
ns
Turn-Off Delay Time
t
d(off)
28.3
ns
Fall Time
t
f
11.6
ns
Total Gate Charge
Q
g
16
nC
V
DS
=16V,V
GS
=4.5V
, I
=3.8A
(Refer to test
circuit)
Gate-Source Charge
Q
gs
3.5
nC
Gate Drain Charge
Q
gd
5.4
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95
V
T
j
=25
°
C, I
S
=3.8A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
23.7
ns
T
=25
°
C, I
=3.8A,
di/dt= 100A/ s
Reverse Recovery Charge(3)
Q
rr
13.3
nC
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
Performance Characterisation of ZXM64N02X
ZXRD1000 SERIES
ISSUE 3 - MAY 2000
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