參數(shù)資料
型號： ZXRD1050PQ16TA
英文描述： IC-SM-DC/DC CONTROLLER
中文描述： IC-SM-DC/DC控制器
文件頁數(shù)： 24/28頁
文件大?。?/td> 639K
代理商： ZXRD1050PQ16TA
24
ISSUE 3 - MAY 2000
N channel devices offer high efficiency
performance for switching applications.
This family of MOSFETs from Zetex offers a
combination of low on-resistance and low gate charge,
providing optimum performance and high efficiency
for switching applications such as DC - DC conversion.
On resistance is low across the family, from only 40m
(max) for the ZXM64N02X part up to 180m (max) for
the ZXM61N02F. This means that on-state losses are
minimised, improving efficiency in low frequency drive
applications. Threshold voltages of 0.7V and 1V
minimum allow the MOSFETs to be driven from low
voltage sources.
To minimise switching losses, and hence increase the
efficiency of high frequency operation, gate charge (Qg)
is small. The maximum Qg varies from 3.4nC to 16nC
depending on which device is chosen. C
rss
(Miller
capacitance) is also low, e.g. typically 30pF for the
ZXM6203E6 device. This results in better efficiency in
high frequency applications.
P channel MOSFETs excel in load
switching applications.
The P-channel MOSFETs offer highly efficient
performance for low voltage load switching
applications. This helps increase battery life in portable
equipment.
Minimum threshold voltage is low, only 0.7V or 1V,
enabling the MOSFETs to provide optimum
performance from a low voltage source. To ensure the
device suitability for low voltage applications, drain to
source voltage is specified at 20V or 30V.
To minimise on-state losses, and improve efficiency in
in low frequency drive applications, the on-resistance
(R
DS(ON)
) is low across the range. For example, the
ZXM64P03X has an R
DS(ON)
of only 100m at a gate to
source voltage of 4.5V.
Gate source charge is also low, easing requirements for
the gate driver. Maximum values range from 0.62nC for
the ZXM61P03F, up to 9nC for the ZXM64P03X.
Small outline surface mount packaging
The products have been designed to optimise the
performance of a range of packages. The parts are
offered in SOT23, SOT23-6 and MSOP8 packages. The
MSOP8 enables single or dual devices to be offered.
The MSOP8 is also half the size of competitive SO8
devices and 20% smaller than TSSOP8 alternatives.
Product performance
The following performance characteristics show the
capabilities of the ZXM64N02X. This device is
recommended for use with certain configurations of
the ZXRD DCDC controller circuit.
ZXCM6 Series
Low voltage MOSFETs
Unique structure gives optimum performance for switching applications.
ZXRD1000 SERIES
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXRD1050PQ16TC 功能描述:DC/DC 開關(guān)控制器 - RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風格: 封裝 / 箱體:CPAK
ZXRE060 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:0.6V ADJUSTABLE PRECISION SHUNT REGULATOR
ZXRE060AET5TA 功能描述:基準電壓& 基準電流 0.6V 0.2-18V 5-TERM ADJUSTABLE RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Voltage References 拓撲結(jié)構(gòu):Shunt References 參考類型:Programmable 輸出電壓:1.24 V to 18 V 初始準確度:0.25 % 平均溫度系數(shù)（典型值）:100 PPM / C 串聯(lián) VREF - 輸入電壓（最大值）: 串聯(lián) VREF - 輸入電壓（最小值）: 分流電流（最大值）:60 mA 最大工作溫度:+ 125 C 封裝 / 箱體:SOT-23-3L 封裝:Reel
ZXRE060AET5TA-CUT TAPE 制造商:DIODES 功能描述:ZXRE060A Series 0.2 - 18 V Adjustable ?.5 % Precision Shunt Regulator-TSOT-23-5
ZXRE060AFT4-7 功能描述:MOSFET Shunt Reference X2-D X2-DFN2015-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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