參數(shù)資料
型號(hào): WED9LC6416V2012BI
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: 存儲(chǔ)器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA153
封裝: MO-163, BGA-153
文件頁(yè)數(shù): 17/27頁(yè)
文件大?。?/td> 334K
代理商: WED9LC6416V2012BI
24
White Electronic Designs Corporation Westborough, MA (508) 366-5151
White Electronic Designs
WED9LC6416V
FIG. 15 SDRAM BURST READ SINGLE BIT WRITE CYCLE @BURST LENGTH =2
NOTES:
1. BRSW modes enabled by setting A
9 “High ” at MRS ((Mode Register Set). At the BRSW Mode,the burst length at Write is fixed to “1 ” regardless of
programmed burst length..
2. When BRSW write command with auto precharge is executed,keep it in mind that tRAS should not be violated.Auto precharge is executed at the burst-end
cycle, so in the case of BRSW write command,the next cycle starts the precharge.
0
1
2
3
4
5
6
7
SDCLK
SDCE
SDRAS
SDCAS
ADDR
RAa
CAa
RBb
CAb
CAd
CBc
BA0,1
[A11,A12]
CL=2
QAb0
DAa0
QAb1
QAd0
DBc0
QAd1
QAa1 QAb1
DBc0
QAd1
QAd0
CL=3
DQ
Row Active
(A-Bank)
Row Active
(B-Bank)
Write
(A-Bank)
Read with
Auto Precharge
(A-Bank)
Row Active
(A-Bank)
Read
(A-Bank)
Write with
Auto Precharge
(B-Bank)
Precharge
(Both Banks)
SDA10
RAa
RBb
SDWE
BWE
DON T CARE
RAc
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