參數(shù)資料
型號： W25X16AVDAIZ
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 2M X 8 FLASH 2.7V PROM, PDIP8
封裝： 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-8
文件頁數(shù)： 22/48頁
文件大小： 1493K
代理商： W25X16AVDAIZ
W25X16A
Publication Release Date: August 13, 2008
- 29 -
Revision A
12.2.15 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, obtain the devices electronic identification (ID) number
or do both.
When used only to release the device from the power-down state, the instruction is issued by driving
the /CS pin low, shifting the instruction code “ABh” and driving /CS high as shown in figure 16. After
the time duration of tRES1 (See AC Characteristics) the device will resume normal operation and other
instructions will be accepted. The /CS pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated
by driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The
Device ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as
shown in figure 17. The Device ID value for the W25X16A is listed in Manufacturer and Device
Identification table. The Device ID can be read continuously. The instruction is completed by driving
/CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction
is the same as previously described, and shown in figure 17, except that after /CS is driven high it
must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the
device will resume normal operation and other instructions will be accepted.
If the Release from Power-down / Device ID instruction is issued while an Erase, Program or Write
cycle is in process (when BUSY equals 1) the instruction is ignored and will not have any effects on
the current cycle
Figure 16. Release Power-down Instruction Sequence
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PDF描述
W25X40AVSSIG 512K X 8 FLASH 2.7V PROM, PDSO8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25X16AVSFIG 功能描述:IC FLASH 16MBIT 75MHZ 16SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
W25X16AVSNIG 功能描述:IC FLASH 16MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
W25X16AVSSIG 功能描述:IC FLASH 16MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
W25X16AVZPIG 制造商:WINBOND 制造商全稱:Winbond 功能描述:16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
W25X16BV 制造商:WINBOND 制造商全稱:Winbond 功能描述:16M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
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