參數(shù)資料
型號(hào): W19B320ATT9G
廠商: WINBOND ELECTRONICS CORP
元件分類(lèi): PROM
英文描述: 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁(yè)數(shù): 25/53頁(yè)
文件大小: 479K
代理商: W19B320ATT9G
W19B320AT/B
Publication Release Date: December 27, 2005
- 31 -
Revision A4
7.6 Temporary Sector Unprotect Algorithm
START
#RESET = VID
(Note 1)
Perform Erase or
Program Operations
#RESET = V
IH
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected (If #WP/ACC = VIL, outermost boot sectors will remain protected).
2. All previously protected sectors are protected once again.
相關(guān)PDF資料
PDF描述
WE128K32-200HSC 512K X 8 EEPROM 5V MODULE, 200 ns, CHIP66
WS512K32-20G4M 2M X 8 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
WS512K32-55G4I 2M X 8 MULTI DEVICE SRAM MODULE, 55 ns, CQFP68
WPDE8M72V-70MDCT 8M X 72 EDO DRAM MODULE, 70 ns, PDMA168
WE512K8-150CIA 512K X 8 EEPROM 5V MODULE, 150 ns, CDIP32
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W19B320B 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory
W19B320BB 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory
W19B320BB-H 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BB-M 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BT 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory