- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383973 > UMF5N (Rohm CO.,LTD.) Power management (dual transistors) PDF資料下載
參數(shù)資料
| 型號： | UMF5N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power management (dual transistors) |
| 中文描述： | 電源管理（）雙晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 87K |
| 代理商： | UMF5N |
UMF5N
Transistors
!
Absolute maximum ratings
(Ta=25
°
C)
Tr1
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
55~
+
150
°
C
Range of storage temperature
2/4
1 Single pulse P
W
=1ms
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Limits
15
12
6
500
1.0
150(TOTAL)
150
1
2
Unit
V
V
V
mA
A
mW
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
DTr2
Parameter
1 Characteristics of built-in transistor.
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
!
Electrical characteristics
(Ta=25
°
C)
Tr1
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Symbol
V
CC
V
IN
I
C
I
O
P
C
Tj
Tstg
Limits
50
10~
+
40
100
30
150(TOTAL)
150
55~
+
150
1
2
Unit
V
V
mA
mA
mW
°
C
°
C
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
Min.
12
15
6
270
Typ.
100
Max.
100
100
250
680
Unit
V
V
V
nA
nA
mV
Conditions
V
CB
=
10V, I
E
=
0mA, f
=
1MHz
Transition frequency
Collector output capacitance
f
T
260
6.5
MHz
pF
V
CE
=
2V, I
E
=
10mA, f
=
100MHz
I
C
=
1mA
I
C
=
10
μ
A
I
E
=
10
μ
A
V
CB
=
15V
V
EB
=
6V
I
C
=
200mA, I
B
=
10mA
V
CE
=
2V, I
C
=
10mA
Cob
DTr2
Parameter
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
Min.
3.0
68
Typ.
100
Max.
0.5
300
180
500
Unit
V
V
mV
μ
A
nA
Conditions
Transition frequency
Input resistance
Resistance ratio
f
T
R
1
250
47
1.0
MHz
k
V
CE
=
10V, I
E
=
5mA, f
=
100MHz
Characteristics of built-in transistor.
V
CC
=
5V, I
O
=
100
μ
A
V
O
=
0.3V, I
O
=
2mA
V
O
=
10mA, I
I
=
0.5mA
V
I
=
5V
V
CC
=
50V, V
I
=
0V
V
O
=
5V, I
O
=
5mA
Input voltage
Output voltage
Input current
Output current
DC current gain
32.9
0.8
61.1
1.2
R
2
/R
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UMF6N | Power management (dual transistors) |
| UMH14N | General purpose (dual digital transistors) |
| UMH2N | General purpose (dual digital transistors) |
| UMH6N | General purpose (dual digital transistors) |
| UMH7N | General purpose (dual digital transistors) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UMF5NTR | 功能描述:開關(guān)晶體管 - 偏壓電阻器 DUAL PNP 12V 500MA RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| UMF6N | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power management (dual transistors) |
| UMF6NTR | 功能描述:二極管 - 通用，功率，開關(guān) PNP/N-CH 12V 500MA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| UMF7N | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power management (dual transistors) |
| UMF7NTR | 功能描述:開關(guān)晶體管 - 偏壓電阻器 COMPLEX BIOPLAR NPN+DTR RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。