- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383973 > UMH7N (Rohm CO.,LTD.) General purpose (dual digital transistors) PDF資料下載
參數(shù)資料
| 型號： | UMH7N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose (dual digital transistors) |
| 中文描述： | 通用（雙數(shù)字晶體管） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 51K |
| 代理商： | UMH7N |
UMH7N / IMH7A
Transistors
General purpose (dual digital transistors)
UMH7N / IMH7A
!
Features
1) Includes two DTC143T transistors in a single UMT
package.
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
50
50
5
100
150 (TOTAL)
300 (TOTAL)
150
55
～+
150
Unit
V
V
V
mA
mW
C
C
1
2
UMH7N
FMG13, IMH7A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
Junction temperature
Storage temperature
!
Package, marking, and Packaging specifications
Part No.
Package
Marking
Code
UMH7N
UMT6
H7
TR
3000
IMH7A
SMT6
H7
T108
3000
Basic ordering unit (pieces)
!
External dimensions
(Units : mm)
ROHM : UMT6
EIAJ : SC-88
ROHM : SMT6
EIAJ : SC-74
IMH7A
UMH7N
Each lead has same dimensions
(
(
(
0.3to0.6
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
Each lead has same dimensions
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
!
Circuit diagram
UMH7N
IMH7A
R
1
R
1
R
1
R
1
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Min.
50
50
5
100
Typ.
250
Max.
0.5
0.5
600
Unit
V
V
V
μ
A
μ
A
Conditions
V
CE(sat)
R
1
0.3
6.11
V
k
I
C
=50
μ
A
I
C
=1mA
I
E
=50
μ
A
V
CB
=50V
V
EB
=4V
V
CE
/ I
C
=5V / 1mA
I
C
/ I
B
=5mA
/ 0.25mA
3.29
4.7
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UMH8N | General purpose (dual digital transistors) |
| UML1N | Low-frequency transistor |
| UML4N | General purpose transistor |
| UMP1N | SWITCHING DIODE |
| UMR12N | Switching diode Silicon epitaxial planar |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UMH7NTR | 功能描述:開關(guān)晶體管 - 偏壓電阻器 DUAL NPN 50V 30MA RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| UMH8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SO |
| UMH8N | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose (dual digital transistors) |
| UMH8NTR | 功能描述:開關(guān)晶體管 - 偏壓電阻器 DUAL NPN 50V 100MA RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| UMH9 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SO |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。