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參數(shù)資料
| 型號： | UMH6N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose (dual digital transistors) |
| 中文描述： | 通用（雙數(shù)字晶體管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 35K |
| 代理商： | UMH6N |
EMH6 / UMH6N / IMH6A
Transistors
General purpose (dual digital transistors)
EMH6 / UMH6N / IMH6A
z
Features
1) Two DTC144E chips in a EMT or UMT or SMT
package.
z
Equivalent circuit
R
1
R
2
R
2
R
1
R
1
R
2
R
2
R
1
(1)
(4)
(5)
(6)
(6)
(5)
(3)
(2)
(1)
EMH6 / UMH6N
IMH6A
z
Package, marking, and packaging specifications
Type
Package
Marking
Code
EMH6
EMT6
H6
T2R
8000
UMH6N
UMT6
H6
TR
3000
IMH6A
SMT6
H6
T108
3000
Basic ordering unit (pieces)
z
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Symbol
V
CC
V
IN
I
O
Pd
Tj
Tstg
Limits
50
40
10
30
300(TOTAL)
150
55
~
+
150
150(TOTAL)
IMH6A
EMH6 / UMH6N
Unit
V
V
mA
mW
1
2
°
C
°
C
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
z
Electrical characteristics
(Ta = 25
°
C)
z
External dimensions
(Units : mm)
Each lead has same dimensions
ROHM : EMT6
EMH6
UMH6N
Each lead has same dimensions
ROHM : UMT6
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
IMH6A
Each lead has same dimensions
ROHM : SMT6
(
(
(
0.3to0.6
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
0
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0
0
0
0
1
1
Parameter
Symbol
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
G
I
R
1
R
2
/
R
1
Min.
3
68
32.9
0.8
Typ.
0.1
47
1
250
Max.
0.5
0.3
0.18
0.5
61.1
1.2
Unit
Conditions
Input resistance
Resistance ratio
f
T
V
V
mA
μ
A
k
MHz
V
CC
=
5V, I
O
=
100
μ
A
V
O
=
0.3V, I
O
=
2mA
I
O
/I
I
=
10mA/0.5mA
V
I
=
5V
V
CC
=
50V, V
I
=
0V
I
O
/V
O
=
5mA/5V
V
CE
=
10V, I
E
=
5mA, f
=
100MHz
Transition frequency of the device.
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UMH6NTR | 功能描述:開關(guān)晶體管 - 偏壓電阻器 DUAL NPN 50V 30MA RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| UMH7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SO |
| UMH7N | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose (dual digital transistors) |
| UMH7NTR | 功能描述:開關(guān)晶體管 - 偏壓電阻器 DUAL NPN 50V 30MA RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| UMH8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SO |
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