參數(shù)資料
型號(hào)： TPS65735RSNR
廠商： TEXAS INSTRUMENTS INC
元件分類(lèi)： 模擬信號(hào)調(diào)理
英文描述： SPECIALTY ANALOG CIRCUIT, PQCC32
封裝： GREEN, PLASTIC, QFN-32
文件頁(yè)數(shù)： 4/32頁(yè)
文件大?。?/td> 1324K
代理商： TPS65735RSNR
SLVSAI6
– JUNE 2011
Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ILKG(BST_S
Leakage into BST_SW pin
BST_EN signal = LOW (Boost
90
nA
W)
(includes leakage into analog
disabled)
h-bridge switches)
VBST_SW = 4.2 V
No load on BST_OUT pin
ISWLIM(BST) Boost MOSFET switch current limit
100
150
200
mA
VDIODE(BST Voltage across integrated boost
BST_EN signal = HIGH
1.0
V
)
diode during normal operation
VBST_SW = 16.0 V
IBST_OUT = - 2 mA
VREF(BST)
Boost reference voltage on BST_FB
1.17
1.2
1.23
V
pin
VREFHYS(BS Boost reference voltage hysteresis
2
2.5
3.2
%
T)
on BST_FB pin
TON(BST)
Maximum on time detection
5
6.5
8
s
threshold
TOFF(BST)
Minimum off time detection threshold
1.4
1.75
2.1
s
TSHUT(BST)
Boost thermal shutdown threshold
105
°C
TSHUT-
Boost thermal shutdown threshold
20
°C
HYS(BST)
hysteresis
FULL H-BRIDGE ANALOG SWITCHES
IQ(HSW)
Operating quiescent current for
5
A
h-bridge switches
RDSON(HSW H-bridge switches on resistance
20
40
Ω
)
TDELAY(HS
H-bridge switch propagation delay,
VHBxy = 0 V → VVLDO
100
ns
W-H)
input switched from low to high
state.
TDELAY(HS
H-bridge switch propagation delay,
VHBxy = VVLDO → 0 V
100
ns
W-L)
input switched from high to low
state.
POWER MANAGEMENT CORE CONTROLLER
VIL(PMIC)
Low logic level for logic signals on
IO logic level decreasing:
0.4
V
power management core
VSYS → 0 V
(BST_EN, CHG_EN, SLEEP, HBR1, IIN = 1 mA
HBR2, HBL1, HBL2)
VIH(PMIC)
High logic level for signals on power
IO logic level increasing:
1.2
V
management core
0 V
→ VSYS
(BST_EN, CHG_EN, SLEEP, HBR1, IIN = 1 mA
HBR2, HBL1, HBL2)
VGOOD(LDO Power fault detection threshold
VVLDO decreasing
1.96
V
)
VGOOD_HYS Power fault detection hysteresis
VVLDO increasing
50
mV
(LDO)
VBATCOMP
COMP pin voltage (scaled down
VBAT = 4.2 V
1.85
V
battery voltage)
VVLDO = 2.2 V
VBAT = 2.5 V
1.10
V
VVLDO = 2.2 V
VBAT = 4.2 V
1.90
V
VVLDO = 3.0 V
VBAT = 3.3 V
1.50
V
VVLDO = 3.0 V
12
POWER MANAGEMENT CORE
Copyright
2011, Texas Instruments Incorporated
Product Folder Link(s): TPS65735
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