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參數(shù)資料
| 型號： | TPS65020RHA |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | POWER MANAGEMENT IC FOR LI-ION POWERED SYSTEMS |
| 中文描述： | 電源管理IC鋰離子供電系統(tǒng) |
| 文件頁數(shù)： | 5/44頁 |
| 文件大?。?/td> | 3085K |
| 代理商： | TPS65020RHA |
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ELECTRICAL CHARACTERISTICS
VINDCDC1 = VINDCDC2 = VINDCDC3 = VCC = VINLDO = 3.6 V, VBACKUP = 3 V, T
A
= –40
°
C to 85
°
C, typical values are
at T
A
= 25
°
C (unless otherwise noted)
TPS65020
SLVS607–SEPTEMBER 2005
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY PINS: VCACKUP, VSYSIN, VRTC
VBACKUP = 3 V, VSYSIN = 0 V;
VCC = 2.6 V, current into VBACKUP
VBACKUP < V_VBACKUP, current into
VBACKUP
VSYSIN = VBACKUP = 0 V, I
O
= 0 mA
VSYSIN < 2.57 V and VBACKUP < 2.57 V
VRTC = GND; VSYSIN = VBACKUP = 0 V
VRTC > 2.6 V, V
= 3 V;
VSYSIN = VBACKUP = 0 V
VSYSIN = VBACKUP = 0 V; Io = 0 mA
VCC = VRTC + 0.5 V to 6.5 V, I
O
= 5 mA
I
= 1 mA to 20 mA;
VSYSIN = VBACKUP = 0 V
Load change from 10% to 90%
VSYSIN < V_VSYSIN
I
(q)
Operating quiescent current
20
33
μ
A
I
(SD)
Operating quiescent current
2
3
μ
A
VRTC LDO output voltage
Output current for VRTC
VRTC short-circuit current limit
Maximum output current at VRTC for
RESPWRON = 1
Output voltage accuracy for VRTC
Line regulation for VRTC
3
V
I
O
20
mA
mA
100
30
mA
V
O
±
1%
±
1%
Load regulation VRTC
±
2%
Regulation time for VRTC
Input leakage current at VSYSIN
r
DS(on)
of VSYSIN switch
r
DS(on)
of VBACKUP switch
Input voltage range at VBACKUP
(1)
Input voltage range at VSYSIN
(1)
VSYSIN threshold
VSYSIN threshold
VBACKUP threshold
VBACKUP threshold
SUPPLY PIN: VINLDO
I
(q)
Operating quiescent current
10
μ
s
μ
A
V
V
V
V
V
V
I
lkg
2
12.5
12.5
3.75
3.75
3%
3%
3%
3%
2.73
2.73
–3%
–3%
–3%
-3%
VSYSIN falling
VSYSIN rising
VBACKUP falling
VBACKUP falling
2.55
2.65
2.55
2.65
Current per LDO into VINLDO
Total current for both LDOs into VINLDO,
VLDO = 0 V
16
30
μ
A
I
(SD)
Shutdown current
0.1
1
μ
A
(1)
Based on the requirements for the Intel PXA270 processor.
5
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