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| 型號： | TMS427409A |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 4194304 4位擴(kuò)展數(shù)據(jù)輸出動態(tài)隨機(jī)存取存儲器 |
| 文件頁數(shù)： | 14/37頁 |
| 文件大小： | 515K |
| 代理商： | TMS427409A |
TMS416409A, TMS417409A, TMS426409A, TMS427409A
4194304 BY 4-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS893B – AUGUST 1996 – REVISED APRIL 1997
14
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
EDO timing requirements over recommended ranges of supply voltage and operating free-air
temperature (see Note 4)
’41x409A-50
’42x409A-50
’41x409A-60
’42x409A-60
’41x409A-70
’42x409A-70
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tHPC
tPRWC
tCSH
tCHO
tDOH
tCAS
tWPE
tOCH
tCP
tOEP
NOTES:
Cycle time, EDO page mode, read-write
20
25
30
ns
Cycle time, EDO read-write
57
68
78
ns
Delay time, RAS active to CAS precharge
40
48
58
ns
Hold time, OE from CAS
7
10
10
ns
Hold time, output from CAS
5
5
5
ns
Pulse duration, CAS active (see Note 7)
8
10000
10
10000
12
10000
ns
Pulse duration, W active (output disable only)
7
7
7
ns
Setup time, OE before CAS
8
10
10
ns
Pulse duration, CAS precharge
8
10
10
ns
Precharge time, OE
5
5
5
ns
4: With ac parameters, it is assumed that tT = 2 ns.
7. In a read-write cycle, tCWD and tCWL must be observed.
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