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參數(shù)資料
| 型號(hào)： | TMS417409ADJ-60 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 4194304 4位擴(kuò)展數(shù)據(jù)輸出動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 14/37頁(yè) |
| 文件大?。?/td> | 515K |
| 代理商： | TMS417409ADJ-60 |
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TMS416409A, TMS417409A, TMS426409A, TMS427409A
4194304 BY 4-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS893B – AUGUST 1996 – REVISED APRIL 1997
14
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
EDO timing requirements over recommended ranges of supply voltage and operating free-air
temperature (see Note 4)
’41x409A-50
’42x409A-50
’41x409A-60
’42x409A-60
’41x409A-70
’42x409A-70
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tHPC
tPRWC
tCSH
tCHO
tDOH
tCAS
tWPE
tOCH
tCP
tOEP
NOTES:
Cycle time, EDO page mode, read-write
20
25
30
ns
Cycle time, EDO read-write
57
68
78
ns
Delay time, RAS active to CAS precharge
40
48
58
ns
Hold time, OE from CAS
7
10
10
ns
Hold time, output from CAS
5
5
5
ns
Pulse duration, CAS active (see Note 7)
8
10000
10
10000
12
10000
ns
Pulse duration, W active (output disable only)
7
7
7
ns
Setup time, OE before CAS
8
10
10
ns
Pulse duration, CAS precharge
8
10
10
ns
Precharge time, OE
5
5
5
ns
4: With ac parameters, it is assumed that tT = 2 ns.
7. In a read-write cycle, tCWD and tCWL must be observed.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS417409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS426409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS427409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS427409ADGA-60 | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS4416 | 16,384 WORD BY 4 BIT DYNAMIC RAM |
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