- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385001 > TMS417409ADJ-60 (National Semiconductor Corporation) 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES PDF資料下載
參數(shù)資料
| 型號： | TMS417409ADJ-60 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 4194304 4位擴(kuò)展數(shù)據(jù)輸出動態(tài)隨機(jī)存取存儲器 |
| 文件頁數(shù)： | 11/37頁 |
| 文件大?。?/td> | 515K |
| 代理商： | TMS417409ADJ-60 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當(dāng)前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁
TMS416409A, TMS417409A, TMS426409A, TMS427409A
4194304 BY 4-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS893B – AUGUST 1996 – REVISED APRIL 1997
11
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
TMS426409A
PARAMETER
TEST CONDITIONS
’426409A-50
MIN
’426409A-60
MIN
’426409A-70
MIN
UNIT
MAX
MAX
MAX
VOH
High-level
output
voltage
IOH = – 2 mA
LVTTL
2.4
2.4
2.4
V
IOH = – 100
μ
A
LVCMOS
VCC–0.2
VCC–0.2
VCC–0.2
VOL
Low-level
output
voltage
IOL = 2 mA
LVTTL
0.4
0.4
0.4
V
IOL = 100
μ
A
LVCMOS
0.2
0.2
0.2
II
Input current
(leakage)
VCC = 3.6 V,
All others = 0 V to VCC
VI = 0 V to 3.9 V,
±
10
±
10
±
10
μ
A
IO
Output
current
(leakage)
VCC = 3.6 V,
CAS high
VO = 0 V to VCC,
±
10
±
10
±
10
μ
A
ICC1§
Average
read- or
write- cycle
current
VCC = 3.6 V,
Minimum cycle
90
70
60
mA
ICC2
Average
standby
current
VIH = 2 V (LVTTL)
After one memory cycle, RAS and CAS
high
2
2
2
mA
VIH = VCC – 0.2 V (LVCMOS),
After one memory cycle, RAS and CAS
high
1
1
1
mA
ICC3§
Average
refresh
current
(RAS-only
refresh
or CBR)
VCC = 3.6 V,
RAS cycling,
CAS high (RAS-only refresh),
RAS low after CAS low (CBR)
Minimum cycle,
90
70
60
mA
ICC4
Average
EDO current
VCC = 3.6 V,
RAS low,
tHPC = MIN,
CAS cycling
100
90
80
mA
For conditions shown as MIN/MAX, use the appropriate value specified in the timing requirements.
Measured with outputs open
§Measured with a maximum of one address change while RAS = VIL
Measured with a maximum of one address change during each EDO cycle, tHPC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS417409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS426409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS427409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS427409ADGA-60 | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS4416 | 16,384 WORD BY 4 BIT DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS417800A | 制造商:TI 制造商全稱:Texas Instruments 功能描述:2097152 BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY |
| TMS417809 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:2097152-WORD BY 8-BIT HIGH-SPEED DRAMS |
| TMS417809A | 制造商:TI 制造商全稱:Texas Instruments 功能描述:2097152 BY 8-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS418160 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-WORD BY 16-BIT HIGH-SPEED DRAMS |
| TMS418160-70DZ | 制造商:Texas Instruments 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。