參數(shù)資料
型號(hào)： TE28F640P30T85
廠商： INTEL CORP
元件分類(lèi)： DRAM
英文描述： Intel StrataFlash Embedded Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁(yè)數(shù)： 54/102頁(yè)
文件大?。?/td> 1609K
代理商： TE28F640P30T85
1-Gbit P30 Family
April 2005
54
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
However, for a synchronous non-array read, the same word of data will be output on successive
clock edges until the burst length requirements are satisfied. Refer to the following waveforms for
more detailed information:
Figure 19, “Synchronous Single-Word Array or Non-array Read Timing” on page 39
Figure 20, “Continuous Burst Read, showing an Output Delay Timing” on page 40
Figure 21, “Synchronous Burst-Mode Four-Word Read Timing” on page 41
10.3
Read Configuration Register
The Read Configuration Register (RCR) is used to select the read mode (synchronous or
asynchronous), and it defines the synchronous burst characteristics of the device. To modify RCR
settings, use the Configure Read Configuration Register command (see
Section 9.2, “Device
Commands” on page 50
).
RCR contents can be examined using the Read Device Identifier command, and then reading from
offset 0x05 (see
Section 14.2, “Read Device Identifier” on page 76
).
The RCR is shown in
Table 22
. The following sections describe each RCR bit.
Table 22.
Read Configuration Register Description (Sheet 1 of 2)
Read Configuration Register (RCR)
Read
Mode
RES
Latency Count
WAIT
Polarity
Data
Hold
WAIT
Delay
Burst
Seq
CLK
Edge
RES
RES
Burst
Wrap
Burst Length
RM
R
LC[2:0]
WP
DH
WD
BS
CE
R
R
BW
BL[2:0]
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Bit
Name
Description
15
Read Mode (RM)
0 = Synchronous burst-mode read
1 = Asynchronous page-mode read (default)
14
Reserved (R)
Reserved bits should be cleared (0)
13:11
Latency Count (LC[2:0])
010 =Code 2
011 =Code 3
100 =Code 4
101 =Code 5
110 =Code 6
111 =Code 7 (default)
(Other bit settings are reserved)
10
Wait Polarity (WP)
0 =WAIT signal is active low
1 =WAIT signal is active high (default)
9
Data Hold (DH)
0 =Data held for a 1-clock data cycle
1 =Data held for a 2-clock data cycle (default)
8
Wait Delay (WD)
0 =WAIT deasserted with valid data
1 =WAIT deasserted one data cycle before valid data (default)
7
Burst Sequence (BS)
0 =Reserved
1 =Linear (default)
6
Clock Edge (CE)
0 = Falling edge
1 = Rising edge (default)
5:4
Reserved (R)
Reserved bits should be cleared (0)
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