參數(shù)資料
型號: TE28F640B3BC90
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 4/58頁
文件大?。?/td> 920K
代理商: TE28F640B3BC90
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
iv
3UHOLPLQDU\
5.0
6.0
7.0
Reset Operations
.....................................................................................................33
Ordering Information
..............................................................................................34
Additional Information
...........................................................................................36
Appendix A
Appendix B
Appendix C
Appendix D
Appendix E
Write State Machine Current/Next States
.................................................37
Architecture Block Diagram
...........................................................................38
Word-Wide Memory Map Diagrams
.............................................................39
Byte-Wide Memory Map Diagrams
..............................................................45
Program and Erase Flowcharts
....................................................................48
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