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參數(shù)資料
| 型號： | TE28F640B3BC90 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 3 Volt Advanced Boot Block Flash Memory |
| 中文描述： | 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數(shù)： | 2/58頁 |
| 文件大?。?/td> | 920K |
| 代理商： | TE28F640B3BC90 |
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The 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 may contain design defects or errors known as errata which may cause
the product to deviate from published specifications. Current characterized errata are available on request.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F640B3TC100 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F640B3TC90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F640C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory |
| TE28F640C3BA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| TE28F640C3BC70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
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