參數(shù)資料
型號: TE28F008SA-100
廠商: INTEL CORP
元件分類: DRAM
英文描述: 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
中文描述: 1M X 8 FLASH 12V PROM, 100 ns, PDSO40
封裝: 10 X 20 MM, TSOP-40
文件頁數(shù): 27/48頁
文件大?。?/td> 304K
代理商: TE28F008SA-100
E
SMART 3 ADVANCED BOOT BLOCK
27
PRELIMINARY
TEST POINTS
INPUT
OUTPUT
V
CCQ
0.0
V
CCQ
2
V
CCQ
2
0580_05
NOTE:
AC test inputs are driven at V
for a logic
“1” and 0.0V for a logic “0.” Input timing begins, and output timing ends, at V
CCQ
/2.
Input rise and fall times (10%–90%) <10 ns. Worst case speed conditions are when V
CCQ
= V
CCQ
Min.
Figure 5. Input Range and Measurement Points
C
L
Out
V
CCQ
Device
under
Test
R
1
R
2
0580_06
NOTE:
See table for component values.
Figure 6. Test Configuration
Test Configuration Component Values for Worst
Case Speed Conditions
Test Configuration
C
L
(pF)
R
1
(
)
R
2
(
)
V
CCQ1
Standard Test
50
25 K
25 K
V
CCQ2
Standard Test
50
16.7 K
16.7 K
NOTE:
C
L
includes jig capacitance.
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