參數(shù)資料
型號(hào)： TE28F020-120
廠商： INTEL CORP
元件分類： DRAM
英文描述： 28F020 2048K (256K X 8) CMOS FLASH MEMORY
中文描述： 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
封裝： 0.310 X 0.720 INCH, TSOP-32
文件頁(yè)數(shù)： 1/38頁(yè)
文件大?。?/td> 878K
代理商： TE28F020-120
E
December 1997
Order Number: 290245-009
n
Flash Electrical Chip-Erase
2 Second Typical Chip-Erase
n
Quick-Pulse Programming Algorithm
10 μS Typical Byte-Program
4 second Chip-Program
n
100,000 Erase/Program Cycles
n
12.0 V ±5% V
PP
n
High-Performance Read
90 ns Maximum Access Time
n
CMOS Low Power Consumption
10 mA Typical Active Current
50 μA Typical Standby Current
0 Watts Data Retention Power
n
Integrated Program/Erase Stop Timer
n
Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
n
Noise Immunity Features
±10% V
CC
Tolerance
Maximum Latch-Up Immunity
through EPI Processing
n
ETOX Nonvolatile Flash Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
n
JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
(See Packaging Spec., Order #231369)
n
Extended Temperature Options
Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-
board during subassembly test; in-system during final test; and in-system after sale. The 28F020 increases
memory flexibility, while contributing to time and cost savings.
The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel’s 28F020 is
offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to
JEDEC standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel’s ETOX (EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V V
PP
supply, the
28F020 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse
programming and quick-erase algorithms.
Intel’s 28F020 employs advanced CMOS circuitry for systems requiring high-performance access speeds,
low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 μA translates
into power savings when the device is deselected. Finally, the highest degree of latch-up protection is
achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA
on address and data pins, from –1 V to V
CC
+ 1 V.
With Intel’s ETOX process technology base, the 28F020 builds on years of EPROM experience to yield the
highest levels of quality, reliability, and cost-effectiveness.
28F020 2048K (256K X 8) CMOS
FLASH MEMORY
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TE28F032B3BA110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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