參數(shù)資料
型號(hào)： TE28F008SA-100
廠商： INTEL CORP
元件分類： DRAM
英文描述： 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
中文描述： 1M X 8 FLASH 12V PROM, 100 ns, PDSO40
封裝： 10 X 20 MM, TSOP-40
文件頁數(shù)： 26/48頁
文件大?。?/td> 304K
代理商： TE28F008SA-100
SMART 3 ADVANCED BOOT BLOCK
E
26
PRELIMINARY
4.4
DC Characteristics
(Continued)
V
CC
2.7 V
–3.6 V
2.7 V–2.85 V
2.7 V–3.3 V
V
CCQ
2.7 V–3.6 V
1.65 V–2.5 V
1.8 V–2.5 V
Sym
Parameter
Note
Min
Max
Min
Max
Min
Max
Unit Test Conditions
V
IL
Input Low Voltage
–0.4
V
CCQ
–0.4V
0.4
–0.2
V
CCQ
–0.2V
-0.10
0.2
–0.2
V
CCQ
–0.2V
-0.10
0.2
V
V
IH
Input High Voltage
V
V
OL
Output Low
Voltage
0.10
0.10
0.10
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OL
= 100
μ
A
V
OH
Output High
Voltage
V
CCQ
–0.1V
V
CCQ
–0.1V
V
CCQ
–0.1V
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OH
= –100
μ
A
V
PPLK
V
Lock-Out
Voltage
2
1.5
1.5
1.5
V
Complete Write
Protection
V
PP1
V
PP
during
2
2.7
3.6
V
V
PP2
Program and
2
2.7
2.85
V
V
PP3
Erase Operations
2
2.7
3.3
V
V
PP4
2,5
11.4
12.6
11.4
12.6
11.4
12.6
V
V
LKO
V
CC
Prog/Erase
Lock Voltage
1.5
1.5
1.5
V
V
LKO2
V
CCQ
Prog/Erase
Lock Voltage
1.2
1.2
1.2
V
NOTES:
1.
2.
All currents are in RMS unless otherwise noted. Typical values at nominal V
CC
, T
A
= +25 °C.
Erase and program are inhibited when V
< V
and not guaranteed outside the valid V
ranges of V
, V
PP2
, V
PP3
and V
For read operations or during idle time, a 5 V supply may be applied to V
PP
indefinitely. However, V
PP
valid levels for program and erase operations.
Sampled, not 100% tested.
Automatic Power Savings (APS) reduces I
CCR
to approximately standby levels in static operation.
Applying V
= 11.4 V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on the main blocks
and 2500 cycles on the parameter blocks. V
may be connected to 12 V for a total of 80 hours maximum. See Section 3.4
for details. For read operations or during idle time, a 5 V supply may be applied to V
PP
indefinitely. However, V
PP
must be
at valid levels for program and erase operations.
Since each column lists specifications for a different V
and V
CCQ
voltage range combination, the test conditions V
Max,
V
CCQ
Max, V
CC
Min, and V
CCQ
Min refer to the maximum or minimum V
CC
or V
CCQ
voltage listed at the top of each column.
3.
4.
5.
6.
相關(guān)PDF資料
PDF描述
TE28F008SC-100 BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
TE28F008BET120 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F020-90 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; No. of Contacts:8; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
TE28F020-120 28F020 2048K (256K X 8) CMOS FLASH MEMORY
TE28F020-150 28F020 2048K (256K X 8) CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F008SC-100 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT
TE28F010-120 制造商:Intel 功能描述:
TE28F010-150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY
TE28F010-90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY
TE28F016 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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