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參數(shù)資料
| 型號： | TE28F008SA-100 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY |
| 中文描述： | 1M X 8 FLASH 12V PROM, 100 ns, PDSO40 |
| 封裝： | 10 X 20 MM, TSOP-40 |
| 文件頁數(shù)： | 12/48頁 |
| 文件大?。?/td> | 304K |
| 代理商： | TE28F008SA-100 |
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SMART 3 ADVANCED BOOT BLOCK
E
12
PRELIMINARY
When V
PP
< V
PPLK
, the device will only execute the
following commands successfully: Read Array,
Read Status Register, Clear Status Register and
Read Identifier. The device provides standard
EEPROM read, standby and output disable
operations. Manufacturer identification and device
identification data can be accessed through the
CUI. All functions associated with altering memory
contents,
namely
program
accessible via the CUI. The internal Write State
Machine (WSM) completely automates program
and erase operations while the CUI signals the start
of an operation and the status register reports
status. The CUI handles the WE# interface to the
data and address latches, as well as system status
requests during WSM operation.
and
erase,
are
3.1
Bus Operation
Smart 3 Advanced Boot Block flash memory
devices read, program and erase in-system via the
local CPU or microcontroller. All bus cycles to or
from the flash memory conform to standard
microcontroller bus cycles. Four control pins dictate
the data flow in and out of the flash component:
CE#, OE#, WE# and RP#. These bus operations
are summarized in Table 3.
Table 3. Bus Operations
(1)
Mode
Note
RP#
CE#
OE#
WE#
DQ
0
–7
DQ
8–15
Read (Array, Status, or
Identifier)
2
–4
V
IH
V
IL
V
IL
V
IH
D
OUT
D
OUT
Output Disable
2
V
IH
V
IL
V
IH
V
IH
High Z
High Z
Standby
2
V
IH
V
IH
X
X
High Z
High Z
Reset
2, 7
V
IL
X
X
X
High Z
High Z
Write
2, 5–7
V
IH
V
IL
V
IH
V
IL
D
IN
D
IN
NOTES:
1.
2.
3.
4.
5.
6.
7.
8-bit devices use only DQ[0:7], 16-bit devices use DQ[0:15]
X must be V
IL
, V
IH
for control pins and addresses.
See DC Characteristicsfor V
PPLK
, V
PP1
, V
PP2
, V
PP3
, V
PP4
voltages.
Manufacturer and device codes may also be accessed in read identifier mode (A
1
–A
21
= 0). See Table 4.
Refer to Table 6 for valid D
IN
during a write operation.
To program or erase the lockable blocks, hold WP# at V
IH
.
RP# must be at GND
±
0.2 V to meet the maximum deep power-down current specified.
相關PDF資料 |
PDF描述 |
|---|---|
| TE28F008SC-100 | BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| TE28F008BET120 | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F020-90 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; No. of Contacts:8; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight |
| TE28F020-120 | 28F020 2048K (256K X 8) CMOS FLASH MEMORY |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F008SC-100 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT |
| TE28F010-120 | 制造商:Intel 功能描述: |
| TE28F010-150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| TE28F010-90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| TE28F016 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
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