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參數(shù)資料
| 型號： | TC253SPD-30 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | Impactron High Sensitivity CCD (Non-Cooled) |
| 中文描述： | Impactron 高靈敏度 CCD（非冷卻） |
| 文件頁數(shù)： | 9/21頁 |
| 文件大?。?/td> | 286K |
| 代理商： | TC253SPD-30 |
×
JULY 2003 SOCS085
9
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating ranges of supply voltage at operating
free-air temperature (unless otherwise noted)
PARAMETER
MIN
TYP
MAX
(100)§
UNIT
Charge multiplication gain
1
30
Excess noise factor for typical CCM gain (see Note 5)
1
1.4
Dynamic range without CCM gain
64
dB
Dynamic range with typical CCM gain (see Note 6)
66
9
dB
μ
V/e-
Charge conversion gain without CCM gain (see Note 7)
τ
Signal-response delay time (see Note 8)
9
ns
Output resistance
Amplifier noise-equivalent signal without CCM gain
320
29
e- rms
Response linearity without CCM gain
1
Response linearity with typical CCM gain
1
Charge-transfer efficiency (see Note 9)
0.9998
0.9999
Supply current
2
3
4
mA
IAG1
3
IAG2
3.2
IAG1-IAG2
2
nF
SAG1
3
SAG2
3.6
Ci
Input capacitance
SAG1-SAG2
2.2
SRG1
40
SRG2
40
SRG1SRG2
50
pF
CMG
30
CMGSRG1
10
ODB
1,000
ADB high (see Note 10)
20
SRG1,2 high (Note 10)
45
Pulse amplitude rejection ratio
SRG1,2 low (Note 10)
45
dB
CMG high (see Note 10)
45
CMD low (see Note 10)
45
OBD low (see Note 10)
45
The values in the table are quoted using CDS = correlated double sampling. CDS is a signal-processing technique that improves performance
by minimizing undesirable effects of reset noise.
All typical values are at TA = 25
°
C.
§Maximum CCM gain is not ensured.
NOTES:
5. Excess noise factor F is defined as the ratio of noise sigma after multiplication divided by M times the noise sigma before
multiplication, where M is the charge multiplication gain.
6. Dynamic range is –20 times the logarithm of the noise sigma divided by the saturation-output signal amplitude.
7. Charge-conversion factor is defined as the ratio of output signal to input number of electrons.
8. Signal-response delay time is the time between the falling edge of the SRG2 pulse and the output-signal valid state.
9. Charge transfer efficiency is one minus the charge loss per transfer in the CCD register.
10. Rejection ratio is –20 times the logarithm of the output referenced to the reset level divided by the 1 V of amplitude change of the
corresponding gate or terminal signal.
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