參數(shù)資料
型號(hào)： TC253SPD-30
廠商： Texas Instruments, Inc.
英文描述： Impactron High Sensitivity CCD (Non-Cooled)
中文描述： Impactron 高靈敏度 CCD（非冷卻）
文件頁(yè)數(shù)： 5/21頁(yè)
文件大?。?/td> 286K
代理商： TC253SPD-30
×
JULY 2003 SOCS085
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Terminal Functions
TERMINAL
NAME
I/O
DESCRIPTION
NO.
ADB
9
I
Supply voltage for amplifiers and clearing drain
CMG
6
I
Charge multiplication gate
IAG1
12
I
Image area gate 1
IAG2
2
I
Image area gate 2
NC
8
No connection
ODB
1
I
Supply voltage for antiblooming drain
SAG1
11
I
Storage area gate 1
SAG2
3
I
Storage area gate 2
SRG1
4
I
Serial register gate 1
SRG2
5
I
Serial register gate 2
SUB
10
Chip substrate
VOUT
7
O
Output signal
detailed description
The TC253SPD-30 consists of four basic functional blocks: The image-sensing area, the image-storage area,
the serial register, and the charge multiplier. The location of each of these blocks is identified in the functional
block diagram
.
image-sensing and storage areas
Figure 1 shows cross sections with potential-well diagrams. As light enters the silicon in the image-sensing
area, electrons are generated and collected in the potential wells of the pixels. Applying a suitable dc bias to
the antiblooming drain provides blooming protection. The electrons that exceed a specified level, determined
by the ODB bias, are drained away from the pixels. If it is necessary to remove all previously accumulated charge
from the wells, a short positive pulse must be applied to the drain. This marks the beginning of the new
integration period. After the integration cycle is completed, charge is quickly transferred into the memory where
it waits for readout. The lines can be read out from the memory in a sequential order to implement progressive
scan, or two lines can be summed together to implement the pseudo-interlace scan.
Twenty-four columns at the left edge of the image-sensing area are shielded from the incident light. These pixels
provide the dark reference used in subsequent video-processing circuits to restore the video-black level. Four
additional dark lines, located between the image-sensing area and the image-storage area, are added for
isolation.
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